Part Details for IPD90P03P4L-04 by Infineon Technologies AG
Overview of IPD90P03P4L-04 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPD90P03P4L-04
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD90P03P4L04ATMA1
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Avnet Americas | Trans MOSFET P-CH 30V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90P03P4L04ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.9742 / $1.1906 | Buy Now |
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Bristol Electronics | 2231 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 90A I(D), 30V, 0.0068OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 | 113 |
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$1.0961 / $1.8268 | Buy Now |
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DISTI #
SMC-IPD90P03P4L-04
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Sensible Micro Corporation | Power Field-Effect Transistor, 90A I(D), 30V, 0.0068Ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-252 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 5 |
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$1.7120 | RFQ |
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Chip 1 Exchange | INSTOCK | 274 |
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RFQ | |
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Win Source Electronics | OptiMOS-P2 Power-Transistor | 49655 |
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$1.8840 / $2.8260 | Buy Now |
Part Details for IPD90P03P4L-04
IPD90P03P4L-04 CAD Models
IPD90P03P4L-04 Part Data Attributes:
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IPD90P03P4L-04
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD90P03P4L-04
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 370 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0068 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 137 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |