Datasheets
IPD90N08S405ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Part Details for IPD90N08S405ATMA1 by Infineon Technologies AG

Overview of IPD90N08S405ATMA1 by Infineon Technologies AG

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Price & Stock for IPD90N08S405ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8914
Newark Mosfet, N-Ch, 80V, 175Deg C, 144W Rohs Compliant: Yes |Infineon IPD90N08S405ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 6095
  • 1 $3.0000
  • 10 $2.6400
  • 25 $2.3800
  • 50 $2.1200
  • 100 $1.8500
  • 250 $1.5900
  • 500 $1.4500
  • 1,000 $1.3700
$1.3700 / $3.0000 Buy Now
DISTI # 448-IPD90N08S405ATMA1CT-ND
DigiKey MOSFET N-CH 80V 90A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 6995
In Stock
  • 1 $2.8200
  • 10 $2.3390
  • 100 $1.8620
  • 500 $1.5755
  • 1,000 $1.3368
  • 2,500 $1.2700
  • 5,000 $1.2222
$1.2222 / $2.8200 Buy Now
DISTI # IPD90N08S405ATMA1
Avnet Americas Trans MOSFET N-CH 80V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90N08S405ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.4654
$1.4654 Buy Now
DISTI # 726-IPD90N08S405ATMA
Mouser Electronics MOSFET N-CHANNEL 75/80V RoHS: Compliant 2215
  • 1 $2.5000
  • 10 $2.0900
  • 100 $1.7200
  • 250 $1.6600
  • 500 $1.4300
  • 1,000 $1.3200
  • 2,500 $1.2600
  • 5,000 $1.2200
$1.2200 / $2.5000 Buy Now
DISTI # 73928962
RS Transistor, OptiMOS T2 Power, N-channel enhancement mode, 80V, 90A, TO252 | Infineon IPD90N08S405ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 5
  • 1 $2.4400
  • 5 $2.2400
  • 10 $2.1500
  • 100 $1.9500
  • 250 $1.8300
$1.8300 / $2.4400 Buy Now
Future Electronics IPD90N08S405 Series 80 V 90 A 5.3 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: No Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 2,500 $1.2400
$1.2400 Buy Now
DISTI # 49881518
Verical Trans MOSFET N-CH 80V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Americas - 2500
  • 2,500 $1.2221
  • 5,000 $1.1874
  • 10,000 $1.1626
$1.1626 / $1.2221 Buy Now
DISTI # 71240606
Verical Trans MOSFET N-CH 80V 90A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 16 Package Multiple: 1 Date Code: 2326 Americas - 2500
  • 16 $1.9875
  • 50 $1.7250
  • 100 $1.6500
  • 200 $1.6375
  • 500 $1.5125
  • 1,000 $1.4375
  • 2,000 $1.4000
  • 2,500 $1.3875
$1.3875 / $1.9875 Buy Now
Rochester Electronics MOSFET_(75V,120V( RoHS: Compliant Status: Active Min Qty: 1 493
  • 1 $1.3800
  • 25 $1.3500
  • 100 $1.3000
  • 500 $1.2400
  • 1,000 $1.1700
$1.1700 / $1.3800 Buy Now
Ameya Holding Limited   Min Qty: 625 12445
  • 625 $1.8105
  • 1,250 $1.7201
$1.7201 / $1.8105 Buy Now
Ameya Holding Limited TO252-3/OptiMOS-T2 Power-Transistor 1217
RFQ
DISTI # C1S322001061229
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2500
  • 1 $2.0900
  • 10 $1.5900
  • 50 $1.3800
  • 100 $1.3200
  • 200 $1.3100
  • 500 $1.2100
  • 1,000 $1.1500
  • 2,000 $1.1200
  • 2,500 $1.1100
$1.1100 / $2.0900 Buy Now
CHIPMALL.COM LIMITED   300
  • 1 $1.7124
$1.7124 Buy Now
DISTI # SP000984282
EBV Elektronik Trans MOSFET N-CH 80V 90A 3-Pin TO-252 T/R (Alt: SP000984282) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPD90N08S405ATMA1

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IPD90N08S405ATMA1 Part Data Attributes

IPD90N08S405ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD90N08S405ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 80V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 240 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 360 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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