Part Details for IPD90N06S4L05ATMA2 by Infineon Technologies AG
Overview of IPD90N06S4L05ATMA2 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Price & Stock for IPD90N06S4L05ATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPD90N06S4L05ATMA2CT-ND
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DigiKey | MOSFET N-CH 60V 90A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2256 In Stock |
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$0.5934 / $2.1200 | Buy Now |
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DISTI #
IPD90N06S4L05ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90N06S4L05ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
726-IPD90N06S4L05ATM
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Mouser Electronics | MOSFETs MOSFET RoHS: Compliant | 1957 |
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$0.5930 / $1.5700 | Buy Now |
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Rochester Electronics | IPD90N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 10 |
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$0.5604 / $0.6593 | Buy Now |
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DISTI #
SP001028748
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EBV Elektronik | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: SP001028748) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD90N06S4L05ATMA2
IPD90N06S4L05ATMA2 CAD Models
IPD90N06S4L05ATMA2 Part Data Attributes
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IPD90N06S4L05ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD90N06S4L05ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 135 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD90N06S4L05ATMA2
This table gives cross-reference parts and alternative options found for IPD90N06S4L05ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD90N06S4L05ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB050N06NGATMA1 | Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPB050N06NGATMA1 |
| IPD048N06L3GBTMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPD048N06L3GBTMA1 |
| IPD90N06S4L05ATMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPD90N06S4L05ATMA1 |
| IPB048N06LG | Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPB048N06LG |
| IPB048N06LGATMA1 | Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPB048N06LGATMA1 |
| NP89N055PUK-E1-AY | Nch Single Power MOSFET 55V 90A 4.0mohm MP-25ZP/TO-263 Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | IPD90N06S4L05ATMA2 vs NP89N055PUK-E1-AY |
| IPD048N06L3GXT | Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPD048N06L3GXT |
| PSMN4R1-60YLX | PSMN4R1-60YL - N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin | Nexperia | IPD90N06S4L05ATMA2 vs PSMN4R1-60YLX |
| 934069893115 | Power Field-Effect Transistor, 100A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | Nexperia | IPD90N06S4L05ATMA2 vs 934069893115 |
| IPB100N06S304ATMA1 | Power Field-Effect Transistor, 100A I(D), 55V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPD90N06S4L05ATMA2 vs IPB100N06S304ATMA1 |