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Transistors / Power Field-Effect Transistors / IPD90N06S4L05ATMA2
Datasheets
IPD90N06S4L05ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN

Part Details for IPD90N06S4L05ATMA2 by Infineon Technologies AG

Overview of IPD90N06S4L05ATMA2 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for IPD90N06S4L05ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 448-IPD90N06S4L05ATMA2CT-ND
DigiKey MOSFET N-CH 60V 90A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2415
In Stock
  • 1 $1.5500
  • 10 $1.2890
  • 100 $1.0261
  • 500 $0.8682
  • 1,000 $0.7367
  • 2,500 $0.6999
  • 5,000 $0.6735
  • 12,500 $0.6512
$0.6512 / $1.5500 Buy Now
DISTI # IPD90N06S4L05ATMA2
Avnet Americas Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD90N06S4L05ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.8075
$0.8075 Buy Now
DISTI # 726-IPD90N06S4L05ATM
Mouser Electronics MOSFET MOSFET RoHS: Compliant 1972
  • 1 $1.5400
  • 10 $1.2800
  • 100 $1.0200
  • 250 $0.9470
  • 500 $0.8590
  • 1,000 $0.7360
  • 2,500 $0.6990
  • 5,000 $0.6730
  • 10,000 $0.6510
$0.6510 / $1.5400 Buy Now
Rochester Electronics IPD90N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 10
  • 1 $0.7598
  • 25 $0.7446
  • 100 $0.7142
  • 500 $0.6838
  • 1,000 $0.6458
$0.6458 / $0.7598 Buy Now
Ameya Holding Limited   986
RFQ
DISTI # SP001028748
EBV Elektronik Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: SP001028748) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPD90N06S4L05ATMA2

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IPD90N06S4L05ATMA2 Part Data Attributes:

Parametric Data
IPD90N06S4L05ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD90N06S4L05ATMA2 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 135 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 360 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD90N06S4L05ATMA2

This table gives cross-reference parts and alternative options found for IPD90N06S4L05ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD90N06S4L05ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB048N06L Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPD90N06S4L05ATMA2 vs IPB048N06L
934066471127 100A, 60V, 0.0046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors IPD90N06S4L05ATMA2 vs 934066471127
IPD90N06S4L05ATMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPD90N06S4L05ATMA2 vs IPD90N06S4L05ATMA1
NP89N055PUK-E2-AY Nch Single Power MOSFET 55V 90A 4.0mohm MP-25ZP/TO-263 Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation IPD90N06S4L05ATMA2 vs NP89N055PUK-E2-AY
IPB050N06NGATMA1 Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPD90N06S4L05ATMA2 vs IPB050N06NGATMA1
PSMN4R1-60YLX PSMN4R1-60YL - N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin Nexperia IPD90N06S4L05ATMA2 vs PSMN4R1-60YLX
PSMN4R0-60YS,115 PSMN4R0-60YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FET@en-us SOIC 4-Pin Nexperia IPD90N06S4L05ATMA2 vs PSMN4R0-60YS,115
IPD048N06L3G Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD90N06S4L05ATMA2 vs IPD048N06L3G
NP89N055PUK-E1-AY Nch Single Power MOSFET 55V 90A 4.0mohm MP-25ZP/TO-263 Automotive, MP-25ZP, /Embossed Tape Renesas Electronics Corporation IPD90N06S4L05ATMA2 vs NP89N055PUK-E1-AY
IPD048N06L3GXT Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD90N06S4L05ATMA2 vs IPD048N06L3GXT

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