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Transistors / Power Field-Effect Transistors / IPD90N06S4L-06
Datasheets
IPD90N06S4L-06 by: Infineon Technologies AG

Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD90N06S4L-06 by Infineon Technologies AG

Results Overview of IPD90N06S4L-06 by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

IPD90N06S4L-06 Information

IPD90N06S4L-06 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD90N06S4L-06

Part # Distributor Description Stock Price Buy
Bristol Electronics   2499
RFQ
Win Source Electronics OptiMOS-T2 Power-Transistor 24000
  • 13 $4.0750
  • 30 $3.3440
  • 47 $3.2390
  • 64 $3.1350
  • 83 $3.0300
  • 111 $2.7170
$2.7170 / $4.0750 Buy Now

Part Details for IPD90N06S4L-06

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IPD90N06S4L-06 Part Data Attributes

Parametric Data
IPD90N06S4L-06 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD90N06S4L-06 Infineon Technologies AG Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 67 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 90 A
Drain-source On Resistance-Max 0.0063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 360 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

IPD90N06S4L-06 Related Parts

IPD90N06S4L-06 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for IPD90N06S4L-06 is a TO-252-3 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 3.5mm x 3.5mm. It's recommended to follow the land pattern recommended by Infineon in their application note AN2013-01-001.

  • To ensure the reliability of IPD90N06S4L-06 in high-temperature applications, it's recommended to follow the derating guidelines provided in the datasheet. Additionally, ensure proper thermal management by providing a heat sink or a thermal interface material (TIM) to reduce the junction temperature. It's also recommended to perform thermal simulations and testing to validate the design.

  • While IPD90N06S4L-06 is a fast-switching MOSFET, it's not recommended for high-frequency switching applications above 100kHz. The device is optimized for switching frequencies up to 50kHz. For higher frequencies, consider using a MOSFET with a lower gate charge and a faster switching time, such as the OptiMOS 5 family.

  • To protect IPD90N06S4L-06 from ESD, follow proper handling and storage procedures. Use an ESD wrist strap or mat when handling the device, and store the device in an ESD-protected package. Additionally, ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to protect the device from ESD events.

  • Yes, IPD90N06S4L-06 can be used in a parallel configuration to increase current capability. However, it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased gate charge. Additionally, consider the thermal management and ensure that the devices are properly heat-sinked to prevent thermal runaway.