Part Details for IPD80R280P7 by Infineon Technologies AG
Overview of IPD80R280P7 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD80R280P7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD80R280P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 17A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R280P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$1.6460 | Buy Now |
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Quest Components | 2000 |
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$2.5860 / $5.1720 | Buy Now | |
DISTI #
IPD80R280P7ATMA1
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Avnet Americas | Trans MOSFET N 800V 17A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R280P7ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$1.6460 | Buy Now |
DISTI #
IPD80R280P7
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TME | Transistor: N-MOSFET, unipolar, 800V, 10.6A, 101W, PG-TO252-3 Min Qty: 1 | 0 |
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$2.4700 / $3.1600 | RFQ |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 2500 |
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$1.7240 / $4.8840 | Buy Now |
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LCSC | TO-252-3 MOSFETs ROHS | 2 |
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$4.1539 / $5.9190 | Buy Now |
Part Details for IPD80R280P7
IPD80R280P7 CAD Models
IPD80R280P7 Part Data Attributes:
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IPD80R280P7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD80R280P7
Infineon Technologies AG
Power Field-Effect Transistor, 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Date Of Intro | 2016-07-11 | |
Avalanche Energy Rating (Eas) | 43 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 101 W | |
Pulsed Drain Current-Max (IDM) | 45 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |