Part Details for IPD65R950C6ATMA1 by Infineon Technologies AG
Overview of IPD65R950C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IPD65R950C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
43709912
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Verical | Trans MOSFET N-CH 700V 4.5A 3-Pin(2+Tab) DPAK T/R Min Qty: 84 Package Multiple: 1 Date Code: 1423 | Americas - 220 |
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$0.3575 / $0.3750 | Buy Now |
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Rochester Electronics | IPD65R950 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 1738 |
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$0.4931 / $0.5801 | Buy Now |
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DISTI #
C1S322000454778
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 220 |
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$0.2920 / $0.3460 | Buy Now |
Part Details for IPD65R950C6ATMA1
IPD65R950C6ATMA1 CAD Models
IPD65R950C6ATMA1 Part Data Attributes
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IPD65R950C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD65R950C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, DPAK-3/2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD65R950C6ATMA1
This table gives cross-reference parts and alternative options found for IPD65R950C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD65R950C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FCD5N60TM | Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | IPD65R950C6ATMA1 vs FCD5N60TM |
| FCD5N60TF | Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3 | Fairchild Semiconductor Corporation | IPD65R950C6ATMA1 vs FCD5N60TF |
| FCD5N60TM | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL | onsemi | IPD65R950C6ATMA1 vs FCD5N60TM |