Part Details for IPD65R660CFDATMA2 by Infineon Technologies AG
Overview of IPD65R660CFDATMA2 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD65R660CFDATMA2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPD65R660CFDATMA2CT-ND
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DigiKey | MOSFET N-CH 700V 6A TO252-3-313 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1607 In Stock |
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$0.5850 / $2.1600 | Buy Now |
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DISTI #
IPD65R660CFDATMA2
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Avnet Americas | Trans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA2) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
726-IPD65R660CFDATMA
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Mouser Electronics | MOSFETs LOW POWER_LEGACY RoHS: Compliant | 0 |
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$0.5850 | Order Now |
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Future Electronics | 650V, 6A, 66Ohm, N-Channel. DPAK, MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.5750 / $0.6000 | Buy Now |
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Future Electronics | 650V, 6A, 66Ohm, N-Channel. DPAK, MOSFET RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 0Reel |
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$0.5750 / $0.6000 | Buy Now |
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DISTI #
SP001977050
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EBV Elektronik | (Alt: SP001977050) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD65R660CFDATMA2
IPD65R660CFDATMA2 CAD Models
IPD65R660CFDATMA2 Part Data Attributes
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IPD65R660CFDATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD65R660CFDATMA2
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 115 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.66 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD65R660CFDATMA2
This table gives cross-reference parts and alternative options found for IPD65R660CFDATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD65R660CFDATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD65R660CFDAATMA1 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3/2 | Infineon Technologies AG | IPD65R660CFDATMA2 vs IPD65R660CFDAATMA1 |
| IPD65R660CFDA | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2 | Infineon Technologies AG | IPD65R660CFDATMA2 vs IPD65R660CFDA |
| IPD65R660CFDBTMA1 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IPD65R660CFDATMA2 vs IPD65R660CFDBTMA1 |
| IPD65R660CFDATMA1 | Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Infineon Technologies AG | IPD65R660CFDATMA2 vs IPD65R660CFDATMA1 |