Part Details for IPD65R380C6ATMA1 by Infineon Technologies AG
Overview of IPD65R380C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD65R380C6ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD65R380C6ATMA1CT-ND
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DigiKey | MOSFET N-CH 650V 10.6A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Limited Supply - Call |
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$0.8569 / $1.9700 | Buy Now |
DISTI #
IPD65R380C6ATMA1
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Avnet Americas | Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.8948 / $1.0936 | Buy Now |
DISTI #
SP001117734
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EBV Elektronik | Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R (Alt: SP001117734) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD65R380C6ATMA1
IPD65R380C6ATMA1 CAD Models
IPD65R380C6ATMA1 Part Data Attributes:
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IPD65R380C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD65R380C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 215 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 10.6 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 29 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPD65R380C6ATMA1
This table gives cross-reference parts and alternative options found for IPD65R380C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD65R380C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD65R380E6 | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380E6 |
IPD65R380E6BTMA1 | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380E6BTMA1 |
IPD65R380E6ATMA1 | Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380E6ATMA1 |
IPD65R380C6BTMA1 | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380C6BTMA1 |
IPD65R380E6AT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380E6AT |
IPD65R380C6BT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380C6BT |
IPD65R380E6BT | Power Field-Effect Transistor | Infineon Technologies AG | IPD65R380C6ATMA1 vs IPD65R380E6BT |