Part Details for IPD60R950C6ATMA1 by Infineon Technologies AG
Overview of IPD60R950C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPD60R950C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85X6033
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Newark | Mosfet, N-Ch, 650V, 5.7A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:5.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon IPD60R950C6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 325 |
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$0.6280 | Buy Now |
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DISTI #
IPD60R950C6ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 4.4A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4747 In Stock |
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$0.4482 / $1.1900 | Buy Now |
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DISTI #
IPD60R950C6ATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 4.4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R950C6ATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.4832 / $0.5905 | Buy Now |
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DISTI #
85X6033
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Avnet Americas | Trans MOSFET N-CH 600V 4.4A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 85X6033) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks, 4 Days Container: Ammo Pack | 325 Partner Stock |
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$0.7900 / $1.2400 | Buy Now |
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DISTI #
726-IPD60R950C6ATMA1
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Mouser Electronics | MOSFET N-Ch 650V 4.4A DPAK-2 RoHS: Compliant | 4965 |
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$0.4480 / $0.9800 | Buy Now |
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Future Electronics | Single N-Channel 600 V 950 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4650 / $0.4900 | Buy Now |
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Future Electronics | Single N-Channel 600 V 950 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4400 / $0.4650 | Buy Now |
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Future Electronics | Single N-Channel 600 V 950 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4650 / $0.4900 | Buy Now |
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Quest Components | 3560 |
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$0.3325 / $1.3300 | Buy Now | |
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Rochester Electronics | IPD60R950 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 4720 |
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$0.4436 / $0.5219 | Buy Now |
Part Details for IPD60R950C6ATMA1
IPD60R950C6ATMA1 CAD Models
IPD60R950C6ATMA1 Part Data Attributes:
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IPD60R950C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD60R950C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 46 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.95 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |