Part Details for IPD60R3K3C6ATMA1 by Infineon Technologies AG
Overview of IPD60R3K3C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPD60R3K3C6ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
13AC9045
|
Newark | Mosfet, N-Ch, 600V, 1.7A, 150Deg C/18.1W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:1.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD60R3K3C6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6911 |
|
$0.3690 / $0.6340 | Buy Now |
DISTI #
87AK5604
|
Newark | Mosfet, N-Ch, 1.7A, To-252-3 Rohs Compliant: Yes |Infineon IPD60R3K3C6ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.2520 / $0.2830 | Buy Now |
DISTI #
IPD60R3K3C6ATMA1CT-ND
|
DigiKey | MOSFET N-CH 600V 1.7A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3925 In Stock |
|
$0.2424 / $0.7300 | Buy Now |
DISTI #
IPD60R3K3C6ATMA1
|
Avnet Americas | Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R3K3C6ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
|
$0.2618 / $0.3199 | Buy Now |
DISTI #
13AC9045
|
Avnet Americas | Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 13AC9045) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 1656 Partner Stock |
|
$0.4210 / $0.6340 | Buy Now |
DISTI #
726-IPD60R3K3C6ATMA1
|
Mouser Electronics | MOSFET N-Ch 650V 1.7A DPAK-2 RoHS: Compliant | 27652 |
|
$0.2480 / $0.6900 | Buy Now |
|
Future Electronics | IPD60R3K3C6 Series 600 V 1.7 A 3.3 Ohm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.2350 / $0.2550 | Buy Now |
|
Bristol Electronics | 139 |
|
RFQ | ||
|
Rochester Electronics | IPD60R3K3 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 101 |
|
$0.2404 / $0.2828 | Buy Now |
DISTI #
SP001117718
|
EBV Elektronik | Trans MOSFET N-CH 650V 1.7A 3-Pin TO-252 T/R (Alt: SP001117718) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IPD60R3K3C6ATMA1
IPD60R3K3C6ATMA1 CAD Models
IPD60R3K3C6ATMA1 Part Data Attributes:
|
IPD60R3K3C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD60R3K3C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 6 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 3.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 4 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |