Datasheets
IPD60R385CPATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Part Details for IPD60R385CPATMA1 by Infineon Technologies AG

Overview of IPD60R385CPATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for IPD60R385CPATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPD60R385CPATMA1CT-ND
DigiKey MOSFET N-CH 600V 9A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4397
In Stock
  • 1 $3.2600
  • 10 $2.1240
  • 100 $1.4783
  • 500 $1.2016
  • 1,000 $1.1126
  • 2,500 $1.0741
$1.0741 / $3.2600 Buy Now
DISTI # IPD60R385CPATMA1
Avnet Americas Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R385CPATMA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 102 Partner Stock
RFQ
DISTI # IPD60R385CPATMA1
Avnet Americas Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R385CPATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPD60R385CPATMA1
Mouser Electronics MOSFETs N-Ch 600V 9A DPAK-2 RoHS: Compliant 2786
  • 1 $2.8300
  • 10 $2.1200
  • 100 $1.5000
  • 500 $1.2200
  • 1,000 $1.1300
  • 2,500 $1.0700
$1.0700 / $2.8300 Buy Now
DISTI # V72:2272_06383106
Arrow Electronics Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2407 Container: Cut Strips Americas - 1288
  • 1 $2.5098
  • 10 $2.0752
  • 25 $2.0547
  • 100 $1.4857
  • 250 $1.4709
  • 500 $1.2111
  • 1,000 $1.1534
$1.1534 / $2.5098 Buy Now
Future Electronics 600V, 9A, 0.385Ohms, PG-TO252 Package, N-Channel Mosfet RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks Container: Reel 2500
Reel
  • 2,500 $1.0600
$1.0600 Buy Now
DISTI # 79052669
Verical Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R Min Qty: 6 Package Multiple: 1 Date Code: 2407 Americas - 1288
  • 1,000 $1.1534
$1.1534 Buy Now
Rochester Electronics IPD60R385 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 102
  • 1 $1.2500
  • 25 $1.2300
  • 100 $1.1800
  • 500 $1.1300
  • 1,000 $1.0700
$1.0700 / $1.2500 Buy Now
DISTI # C1S322000625358
Chip1Stop MOSFET RoHS: Compliant 1288
  • 1 $2.5098
  • 10 $2.0752
  • 25 $2.0547
  • 100 $1.4857
  • 250 $1.4709
  • 500 $1.2111
  • 1,000 $1.1800
$1.1800 / $2.5098 Buy Now
DISTI # SP000680638
EBV Elektronik Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R (Alt: SP000680638) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 600V 9A TO-252 11100
  • 21 $2.4030
  • 51 $1.9710
  • 79 $1.9100
  • 109 $1.8480
  • 140 $1.7870
  • 188 $1.6020
$1.6020 / $2.4030 Buy Now

Part Details for IPD60R385CPATMA1

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IPD60R385CPATMA1 Part Data Attributes

IPD60R385CPATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD60R385CPATMA1 Infineon Technologies AG Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC PACKAGE-3/2
Reach Compliance Code not_compliant
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 227 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.385 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD60R385CPATMA1

This table gives cross-reference parts and alternative options found for IPD60R385CPATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R385CPATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD60R385CP Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD60R385CPATMA1 vs IPD60R385CP
Part Number Description Manufacturer Compare
IPD60R385CP Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD60R385CPATMA1 vs IPD60R385CP
IPD60R385CPBTMA1 Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD60R385CPATMA1 vs IPD60R385CPBTMA1

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