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Transistors / Power Field-Effect Transistors / IPD60R2K1CEAUMA1
Datasheets
IPD60R2K1CEAUMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2

Part Details for IPD60R2K1CEAUMA1 by Infineon Technologies AG

Overview of IPD60R2K1CEAUMA1 by Infineon Technologies AG

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Price & Stock for IPD60R2K1CEAUMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1677
Newark Mosfet, N-Ch, 600V, 3.7A, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:3.7A, Drain Source Voltage Vds:600V, On Resistance Rds(On):1.8Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Infineon IPD60R2K1CEAUMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1341
  • 1 $0.2980
$0.2980 Buy Now
DISTI # 86AK5224
Newark Mosfet, N-Ch, 600V, 3.7A, To-252 Rohs Compliant: Yes |Infineon IPD60R2K1CEAUMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.2530
  • 5,000 $0.2470
  • 10,000 $0.2400
  • 15,000 $0.2330
  • 25,000 $0.2270
$0.2270 / $0.2530 Buy Now
DISTI # IPD60R2K1CEAUMA1CT-ND
DigiKey MOSFET N-CH 600V 2.3A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 10226
In Stock
  • 1 $0.4500
  • 10 $0.3860
  • 100 $0.2686
  • 500 $0.2097
  • 1,000 $0.1819
  • 2,500 $0.1819
$0.1819 / $0.4500 Buy Now
DISTI # IPD60R2K1CEAUMA1
Avnet Americas Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R2K1CEAUMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2256
  • 5,000 $0.2187
  • 10,000 $0.2119
  • 15,000 $0.2051
  • 20,000 $0.1982
  • 25,000 $0.1914
  • 250,000 $0.1845
$0.1845 / $0.2256 Buy Now
DISTI # 726-IPD60R2K1CEAUMA1
Mouser Electronics MOSFET CONSUMER RoHS: Compliant 13479
  • 1 $0.6300
  • 10 $0.5450
  • 100 $0.3830
  • 500 $0.2990
  • 1,000 $0.2430
  • 2,500 $0.2020
  • 10,000 $0.1910
  • 25,000 $0.1810
$0.1810 / $0.6300 Buy Now
Future Electronics Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 220000
Reel
  • 2,500 $0.1840
  • 5,000 $0.1800
  • 10,000 $0.1770
  • 12,500 $0.1760
  • 37,500 $0.1690
$0.1690 / $0.1840 Buy Now
Future Electronics Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.1890
  • 5,000 $0.1850
  • 7,500 $0.1830
  • 10,000 $0.1820
  • 12,500 $0.1770
$0.1770 / $0.1890 Buy Now
Ameya Holding Limited   Min Qty: 10 2480
  • 10 $0.6270
  • 50 $0.6080
  • 100 $0.5716
  • 250 $0.5203
  • 1,000 $0.4578
$0.4578 / $0.6270 Buy Now
DISTI # SP001396904
EBV Elektronik Transistor MOSFET N-CH 600V 3.7A 3-Pin TO-252 T/R (Alt: SP001396904) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days EBV - 25000
Buy Now
New Advantage Corporation Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS� Power Mosfet - TO-252-3 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 175000
  • 2,500 $0.1914
  • 175,000 $0.1787
$0.1787 / $0.1914 Buy Now

Part Details for IPD60R2K1CEAUMA1

IPD60R2K1CEAUMA1 CAD Models

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IPD60R2K1CEAUMA1 Part Data Attributes:

Parametric Data
IPD60R2K1CEAUMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD60R2K1CEAUMA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 11 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 2.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD60R2K1CEAUMA1

This table gives cross-reference parts and alternative options found for IPD60R2K1CEAUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD60R2K1CEAUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD60R2K1CE Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Infineon Technologies AG IPD60R2K1CEAUMA1 vs IPD60R2K1CE
Part Number Description Manufacturer Compare
IPD60R2K1CE Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 Infineon Technologies AG IPD60R2K1CEAUMA1 vs IPD60R2K1CE

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