Part Details for IPD60R2K0C6ATMA1 by Infineon Technologies AG
Overview of IPD60R2K0C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPD60R2K0C6ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
49AC0294
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Newark | Mosfet, N-Ch, 600V, 2.4A, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:600V, On Resistance Rds(On):1.8Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Infineon IPD60R2K0C6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.3930 / $0.9260 | Buy Now |
DISTI #
448-IPD60R2K0C6ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 2.4A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2500 In Stock |
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$0.2928 / $0.8900 | Buy Now |
DISTI #
IPD60R2K0C6ATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R2K0C6ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.3162 / $0.3864 | Buy Now |
DISTI #
726-IPD60R2K0C6ATMA1
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Mouser Electronics | MOSFET LOW POWER_LEGACY RoHS: Compliant | 4579 |
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$0.2920 / $0.8900 | Buy Now |
DISTI #
SP001117714
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EBV Elektronik | Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R (Alt: SP001117714) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD60R2K0C6ATMA1
IPD60R2K0C6ATMA1 CAD Models
IPD60R2K0C6ATMA1 Part Data Attributes
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IPD60R2K0C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD60R2K0C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 11 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |