Part Details for IPD50R650CEAUMA1 by Infineon Technologies AG
Overview of IPD50R650CEAUMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPD50R650CEAUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1674
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Newark | Mosfet, N-Ch, 500V, 9A, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:9A, Drain Source Voltage Vds:500V, On Resistance Rds(On):0.59Ohm, Rds(On) Test Voltage Vgs:13V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon IPD50R650CEAUMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1887 |
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$0.4410 / $0.9590 | Buy Now |
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DISTI #
448-IPD50R650CEAUMA1CT-ND
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DigiKey | MOSFET N-CH 500V 9A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1454 In Stock |
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$0.2884 / $0.8700 | Buy Now |
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DISTI #
IPD50R650CEAUMA1
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Avnet Americas | Power MOSFET, N Channel, 500 V, 9 A, 650 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IPD50R650CEAUMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.2896 / $0.3539 | Buy Now |
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DISTI #
726-IPD50R650CEAUMA1
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Mouser Electronics | MOSFET CONSUMER RoHS: Compliant | 1786 |
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$0.2880 / $0.8700 | Buy Now |
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Future Electronics | IPD50R650CE Series 500 V 9 A 650 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2850 / $0.3050 | Buy Now |
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Future Electronics | IPD50R650CE Series 500 V 9 A 650 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2850 / $0.3050 | Buy Now |
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Future Electronics | IPD50R650CE Series 500 V 9 A 650 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 2500 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.2850 / $0.3850 | Buy Now |
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Rochester Electronics | IPD50R650 - 500V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 10000 |
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$0.2859 / $0.3364 | Buy Now |
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DISTI #
SP001396796
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EBV Elektronik | Power MOSFET, N Channel, 500 V, 9 A, 650 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount (Alt: SP001396796) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPD50R650CEAUMA1
IPD50R650CEAUMA1 CAD Models
IPD50R650CEAUMA1 Part Data Attributes:
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IPD50R650CEAUMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50R650CEAUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3/2
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 102 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |