Datasheets
IPD50P04P4L11ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPD50P04P4L11ATMA2 by Infineon Technologies AG

Overview of IPD50P04P4L11ATMA2 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPD50P04P4L11ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 80AH9597
Newark Mosfet, P-Ch, 40V, 50A, To-252, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD50P04P4L11ATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 76282
  • 1 $1.4100
  • 10 $1.1600
  • 25 $1.0800
  • 50 $0.9930
  • 100 $0.9070
  • 250 $0.8380
  • 500 $0.7690
  • 1,000 $0.6260
$0.6260 / $1.4100 Buy Now
DISTI # 86AK5216
Newark Mosfet, P-Ch, 40V, 50A, To-252 Rohs Compliant: Yes |Infineon IPD50P04P4L11ATMA2 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.5760
  • 5,000 $0.5620
  • 10,000 $0.5490
  • 15,000 $0.5360
$0.5360 / $0.5760 Buy Now
DISTI # 448-IPD50P04P4L11ATMA2CT-ND
DigiKey MOSFET P-CH 40V 50A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6940
In Stock
  • 1 $1.3700
  • 10 $1.1220
  • 100 $0.8730
  • 500 $0.7400
  • 1,000 $0.6028
  • 2,500 $0.5675
  • 5,000 $0.5404
  • 12,500 $0.5155
$0.5155 / $1.3700 Buy Now
DISTI # IPD50P04P4L11ATMA2
Avnet Americas OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 50A 3-Pin TO-252 Surface M - Tape and Reel (Alt: IPD50P04P4L11ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6380
$0.6380 Buy Now
DISTI # IPD50P04P4L11ATMA2
Avnet Americas OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 50A 3-Pin TO-252 Surface M - Tape and Reel (Alt: IPD50P04P4L11ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6791
  • 5,000 $0.6586
  • 10,000 $0.6380
  • 15,000 $0.6174
  • 20,000 $0.5968
  • 25,000 $0.5762
  • 250,000 $0.5557
$0.5557 / $0.6791 Buy Now
DISTI # 726-IPD50P04P4L11AT2
Mouser Electronics MOSFET MOSFET_(20V 40V) RoHS: Compliant 4342
  • 1 $1.3700
  • 10 $1.1200
  • 100 $0.8720
  • 500 $0.7390
  • 1,000 $0.6020
  • 2,500 $0.5670
  • 5,000 $0.5400
  • 10,000 $0.5150
$0.5150 / $1.3700 Buy Now
Future Electronics IPD50P04P4L11 Series 40 V 50 A 10.6 mOhm 58 W 45 nC P-Channel MOSFET - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 67500
Reel
  • 2,500 $0.5550
  • 5,000 $0.5400
  • 7,500 $0.5300
$0.5300 / $0.5550 Buy Now
DISTI # 71239530
Verical Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 31 Package Multiple: 1 Date Code: 2320 Americas - 2470
  • 31 $1.0225
  • 50 $0.9638
  • 100 $0.8375
  • 200 $0.7988
  • 500 $0.7975
  • 1,000 $0.7313
  • 2,000 $0.6950
$0.6950 / $1.0225 Buy Now
Rochester Electronics IPD50P04P4L-11 - MOSFET_(20V,40V) RoHS: Compliant Status: Active Min Qty: 1 35203
  • 1 $0.6003
  • 25 $0.5883
  • 100 $0.5643
  • 500 $0.5403
  • 1,000 $0.5103
$0.5103 / $0.6003 Buy Now
DISTI # IPD50P04P4L11ATMA2
TME Transistor: P-MOSFET, OptiMOS® -P2, unipolar, -40V, -40A, 58W Min Qty: 1 0
  • 1 $1.6800
  • 5 $1.5000
  • 25 $1.3300
  • 100 $1.2000
$1.2000 / $1.6800 RFQ
Ameya Holding Limited   Min Qty: 2 2174
  • 2 $1.7142
  • 10 $1.6630
  • 100 $1.5805
  • 250 $1.4702
  • 500 $1.3374
$1.3374 / $1.7142 Buy Now
DISTI # C1S322000816172
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2470
  • 1 $1.1100
  • 10 $0.8180
  • 50 $0.7710
  • 100 $0.6700
  • 200 $0.6390
  • 500 $0.6380
  • 1,000 $0.5850
  • 2,000 $0.5560
$0.5560 / $1.1100 Buy Now
DISTI # SP002325766
EBV Elektronik OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 50A 3-Pin TO-252 Surface M (Alt: SP002325766) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 55000
  • 2,500 $0.7214
  • 55,000 $0.6733
$0.6733 / $0.7214 Buy Now
Win Source Electronics MOSFET P-CH 40V 50A TO252-3 / P-Channel 40 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313 399990
  • 45 $1.1310
  • 110 $0.9280
  • 170 $0.8990
  • 230 $0.8700
  • 300 $0.8410
  • 400 $0.7540
$0.7540 / $1.1310 Buy Now

Part Details for IPD50P04P4L11ATMA2

IPD50P04P4L11ATMA2 CAD Models

IPD50P04P4L11ATMA2 Part Data Attributes

IPD50P04P4L11ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD50P04P4L11ATMA2 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 18 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0106 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 74 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 58 W
Pulsed Drain Current-Max (IDM) 200 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD50P04P4L11ATMA2

This table gives cross-reference parts and alternative options found for IPD50P04P4L11ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50P04P4L11ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD50P04P4L11ATMA1 Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPD50P04P4L11ATMA2 vs IPD50P04P4L11ATMA1
SUD50P04-09L-E3 Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPD50P04P4L11ATMA2 vs SUD50P04-09L-E3
Part Number Description Manufacturer Compare
NP50P04SLG-E1-AY Power MOSFETs for Automotive, MP-3ZK, /Embossed Tape Renesas Electronics Corporation IPD50P04P4L11ATMA2 vs NP50P04SLG-E1-AY
SI7463ADP-T1-GE3 Power Field-Effect Transistor, 46A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies IPD50P04P4L11ATMA2 vs SI7463ADP-T1-GE3
SUD50P04-09L-E3 Power Field-Effect Transistor, 50A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPD50P04P4L11ATMA2 vs SUD50P04-09L-E3
SUD50P04-15 Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Vishay Siliconix IPD50P04P4L11ATMA2 vs SUD50P04-15
SUD50P04-08-GE3 Power Field-Effect Transistor, 50A I(D), 40V, 0.0081ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPD50P04P4L11ATMA2 vs SUD50P04-08-GE3
IPD50P04P4L11ATMA1 Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPD50P04P4L11ATMA2 vs IPD50P04P4L11ATMA1
SUD50P04-09L-E3 TRANSISTOR 50 A, 40 V, 0.0094 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Vishay Siliconix IPD50P04P4L11ATMA2 vs SUD50P04-09L-E3
SUD50P04-15-E3 TRANSISTOR 50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power Vishay Siliconix IPD50P04P4L11ATMA2 vs SUD50P04-15-E3
NVTFWS014P04M8LTAG Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ, -49 A, 1500-REEL, Automotive Qualified onsemi IPD50P04P4L11ATMA2 vs NVTFWS014P04M8LTAG
SUD50P04-15-E3 Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN Vishay Intertechnologies IPD50P04P4L11ATMA2 vs SUD50P04-15-E3

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