Part Details for IPD50N06S409ATMA2 by Infineon Technologies AG
Overview of IPD50N06S409ATMA2 by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD50N06S409ATMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
49AC0293
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Newark | Mosfet, Aec-Q100, N-Ch, 60V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0071Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPD50N06S409ATMA2 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14936 |
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$1.2800 | Buy Now |
DISTI #
86AK5213
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Newark | Mosfet, N-Ch, 60V, 50A, To-252 Rohs Compliant: Yes |Infineon IPD50N06S409ATMA2 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5660 | Buy Now |
DISTI #
448-IPD50N06S409ATMA2CT-ND
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DigiKey | MOSFET N-CH 60V 50A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2304 In Stock |
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$0.4653 / $1.2400 | Buy Now |
DISTI #
IPD50N06S409ATMA2
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Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S409ATMA2) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 2500 |
|
$0.5758 | Buy Now |
DISTI #
726-IPD50N06S409ATMA
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Mouser Electronics | MOSFET MOSFET RoHS: Compliant | 12586 |
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$0.4650 / $0.9900 | Buy Now |
DISTI #
V72:2272_06384715
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Arrow Electronics | Trans MOSFET N-CH 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2238 Container: Cut Strips | Americas - 3268 |
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$0.4986 / $0.7067 | Buy Now |
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Future Electronics | IPD50N06S4 Series 60 V 9 mOhm 50 A OptiMOS®-T2 Power-Transistor-PG-TO252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 2500Reel |
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$0.4550 / $0.4800 | Buy Now |
DISTI #
64984817
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Verical | Trans MOSFET N-CH 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 12 Package Multiple: 1 Date Code: 2238 | Americas - 3268 |
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$0.4986 / $0.6387 | Buy Now |
DISTI #
71240425
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Verical | Trans MOSFET N-CH 60V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 39 Package Multiple: 1 Date Code: 2316 | Americas - 2500 |
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$0.5513 / $0.8125 | Buy Now |
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Bristol Electronics | 10 |
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RFQ |
Part Details for IPD50N06S409ATMA2
IPD50N06S409ATMA2 CAD Models
IPD50N06S409ATMA2 Part Data Attributes
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IPD50N06S409ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD50N06S409ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 87 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPD50N06S409ATMA2
This table gives cross-reference parts and alternative options found for IPD50N06S409ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N06S409ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD50N06S3-09 | Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD50N06S409ATMA2 vs IPD50N06S3-09 |
IPD50N06S309ATMA1 | Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD50N06S409ATMA2 vs IPD50N06S309ATMA1 |
IPD50N06S409ATMA1 | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPD50N06S409ATMA2 vs IPD50N06S409ATMA1 |
IPB090N06N3G | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD50N06S409ATMA2 vs IPB090N06N3G |
AON7244 | Power Field-Effect Transistor, 50A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, GREEN, EP, DFN-8 | Alpha & Omega Semiconductor | IPD50N06S409ATMA2 vs AON7244 |
IPB090N06N3GATMA1 | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD50N06S409ATMA2 vs IPB090N06N3GATMA1 |
IPB081N06L3GATMA1 | Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD50N06S409ATMA2 vs IPB081N06L3GATMA1 |