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Transistors / Power Field-Effect Transistors / IPD30N06S215ATMA2
Datasheets
IPD30N06S215ATMA2 by:
Infineon Technologies AG
EBV Chips
Infineon Technologies AG
Not Found

Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN

Part Details for IPD30N06S215ATMA2 by Infineon Technologies AG

Results Overview of IPD30N06S215ATMA2 by Infineon Technologies AG

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IPD30N06S215ATMA2 Information

IPD30N06S215ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD30N06S215ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 34AC1670
Newark Mosfet, Aec-Q101, N-Ch, 55V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:30... A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.0113Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPD30N06S215ATMA2 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.7300
  • 10 $1.1600
  • 25 $1.0600
  • 50 $0.9480
  • 100 $0.8400
  • 250 $0.7710
  • 500 $0.7000
  • 1,000 $0.6390
$0.6390 / $1.7300 Buy Now
DISTI # IPD30N06S215ATMA2CT-ND
DigiKey MOSFET N-CH 55V 30A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6559
In Stock
  • 1 $1.6900
  • 10 $1.1420
  • 100 $0.8242
  • 500 $0.6925
  • 1,000 $0.6353
  • 2,500 $0.5733
  • 5,000 $0.5525
$0.5525 / $1.6900 Buy Now
DISTI # IPD30N06S215ATMA2
Avnet Americas Trans MOSFET N-CH 55V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S215ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.5379
  • 5,000 $0.5317
  • 10,000 $0.5246
  • 15,000 $0.5184
  • 20,000 $0.5114
$0.5114 / $0.5379 Buy Now
DISTI # 726-IPD30N06S215ATM2
Mouser Electronics MOSFETs MOSFET_)40V 60V) RoHS: Compliant 2090
  • 1 $1.6600
  • 10 $1.1200
  • 100 $0.8080
  • 500 $0.6730
  • 1,000 $0.6140
  • 2,500 $0.5730
  • 5,000 $0.5520
$0.5520 / $1.6600 Buy Now
DISTI # V72:2272_06384725
Arrow Electronics Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2247 Container: Cut Strips Americas - 1625
  • 1 $0.7466
  • 10 $0.6734
  • 25 $0.6560
  • 100 $0.5982
  • 250 $0.5944
  • 500 $0.5806
  • 1,000 $0.5668
$0.5668 / $0.7466 Buy Now
Future Electronics N-Channel 55 V 14.7 mOhm 110 nC OptiMOS® Power-Transistor - PG-TO252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 2,500 $0.5700
  • 5,000 $0.5550
$0.5550 / $0.5700 Buy Now
DISTI # 65154983
Verical Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 49 Package Multiple: 1 Americas - 6978
  • 49 $0.6034
$0.6034 Buy Now
DISTI # 85990880
Verical Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 543 Package Multiple: 1 Date Code: 2101 Americas - 5239
  • 543 $0.6906
  • 1,000 $0.6523
$0.6523 / $0.6906 Buy Now
DISTI # 85985870
Verical Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 543 Package Multiple: 1 Date Code: 2301 Americas - 4299
  • 543 $0.6906
  • 1,000 $0.6523
$0.6523 / $0.6906 Buy Now
DISTI # 85991710
Verical Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 543 Package Multiple: 1 Date Code: 2201 Americas - 2066
  • 543 $0.6906
  • 1,000 $0.6523
$0.6523 / $0.6906 Buy Now
DISTI # 65184511
Verical Trans MOSFET N-CH 55V 30A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 Min Qty: 11 Package Multiple: 1 Date Code: 2247 Americas - 1625
  • 11 $0.6734
  • 25 $0.6560
  • 100 $0.5982
  • 250 $0.5944
  • 500 $0.5806
  • 1,000 $0.5668
$0.5668 / $0.6734 Buy Now
Rochester Electronics IPD30N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 11604
  • 1 $0.6139
  • 25 $0.6016
  • 100 $0.5771
  • 500 $0.5525
  • 1,000 $0.5218
$0.5218 / $0.6139 Buy Now
DISTI # IPD30N06S215ATMA2
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 6978
  • 1 $0.5970
  • 10 $0.5560
  • 50 $0.5550
  • 100 $0.5540
  • 200 $0.5470
  • 2,000 $0.5460
$0.5460 / $0.5970 Buy Now
DISTI # SP001061724
EBV Elektronik Trans MOSFET NCH 55V 30A 3Pin TO252 TR (Alt: SP001061724) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 4781
RFQ

Part Details for IPD30N06S215ATMA2

IPD30N06S215ATMA2 CAD Models

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IPD30N06S215ATMA2 Part Data Attributes

Parametric Data
IPD30N06S215ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD30N06S215ATMA2 Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-252-3-11, 3/2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 240 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.0147 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

IPD30N06S215ATMA2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPD30N06S215ATMA2 is -55°C to 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.

  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate trace as short as possible to minimize ringing and oscillations.

  • Yes, the IPD30N06S215ATMA2 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).

  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.