Datasheets
IPD14N03L by: Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

Part Details for IPD14N03L by Infineon Technologies AG

Overview of IPD14N03L by Infineon Technologies AG

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Price & Stock for IPD14N03L

Part # Distributor Description Stock Price Buy
Quest Components 30 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 3979
  • 1 $0.8100
  • 530 $0.3375
  • 2,371 $0.2970
$0.2970 / $0.8100 Buy Now
Quest Components 30 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 7680
  • 1 $1.3500
  • 1,482 $0.4725
  • 3,176 $0.4050
$0.4050 / $1.3500 Buy Now
Velocity Electronics Our Stock 439
RFQ

Part Details for IPD14N03L

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IPD14N03L Part Data Attributes:

IPD14N03L Infineon Technologies AG
Buy Now Datasheet
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IPD14N03L Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-252
Package Description PLASTIC PACKAGE-3
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD14N03L

This table gives cross-reference parts and alternative options found for IPD14N03L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD14N03L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD13N03LAG Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD14N03L vs IPD13N03LAG
IPD13N03LA Power Field-Effect Transistor, 30A I(D), 25V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD14N03L vs IPD13N03LA

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