Part Details for IPD038N06N3GATMA1 by Infineon Technologies AG
Overview of IPD038N06N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for IPD038N06N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPD038N06N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 90A TO252-3 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2472 In Stock |
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$0.8079 / $1.3500 | Buy Now |
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DISTI #
IPD038N06N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD038N06N3GATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.7271 / $0.8887 | Buy Now |
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Future Electronics | Single N-Channel 60 V 3.8 mOhm 98 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 5000Reel |
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$0.8200 / $0.8550 | Buy Now |
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Future Electronics | Single N-Channel 60 V 3.8 mOhm 98 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8200 / $0.8500 | Buy Now |
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DISTI #
IPD038N06N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD038N06N3GATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.7271 / $0.8887 | Buy Now |
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DISTI #
IPD038N06N3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 60V, 90A, 188W, PG-TO252-3 Min Qty: 1 | 0 |
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$0.6500 / $1.1600 | RFQ |
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DISTI #
SP000397994
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EBV Elektronik | Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: SP000397994) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days | EBV - 2500 |
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Buy Now | |
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LCSC | 60V 90A 188W 3.8m90A10V 4V90uA 1PCSNChannel TO-252-3 MOSFETs ROHS | 2 |
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$0.7842 / $1.1720 | Buy Now |
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New Advantage Corporation | Single N-Channel 60 V 3.8 mOhm 98 nC OptiMOS� Power Mosfet - DPAK RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 5000 |
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$0.6467 / $0.6929 | Buy Now |
Part Details for IPD038N06N3GATMA1
IPD038N06N3GATMA1 CAD Models
IPD038N06N3GATMA1 Part Data Attributes:
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IPD038N06N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD038N06N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 165 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 90 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD038N06N3GATMA1
This table gives cross-reference parts and alternative options found for IPD038N06N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD038N06N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD90N06S404ATMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPD038N06N3GATMA1 vs IPD90N06S404ATMA1 |