Part Details for IPD034N06N3GATMA1 by Infineon Technologies AG
Results Overview of IPD034N06N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD034N06N3GATMA1 Information
IPD034N06N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD034N06N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
85X6026
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Newark | Mosfet Transistor, N Channel, 100 A, 60 V, 0.0028 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IPD03... more RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2946 |
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$0.7800 / $2.1000 | Buy Now |
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DISTI #
86AK5189
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Newark | Mosfet, N-Ch, 60V, 100A, To-252 Rohs Compliant: Yes |Infineon IPD034N06N3GATMA1 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7300 / $0.7320 | Buy Now |
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DISTI #
IPD034N06N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 100A TO252-3 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
15147 In Stock |
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$0.7024 / $2.4000 | Buy Now |
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DISTI #
IPD034N06N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD034N06N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel |
17500 |
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$0.5568 / $0.5815 | Buy Now |
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DISTI #
E02:0323_00274618
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Arrow Electronics | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Date Code: 2421 | Europe - 5000 |
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$0.5434 / $0.6212 | Buy Now |
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Future Electronics | Single N-Channel 60 V 3.4 mOhm 98 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel |
5000 Reel |
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$0.5600 / $0.5750 | Buy Now |
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Future Electronics | Single N-Channel 60 V 3.4 mOhm 98 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel |
0 Reel |
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$0.5600 / $0.5750 | Buy Now |
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DISTI #
84433694
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Verical | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2421 | Americas - 5000 |
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$0.5477 / $0.6261 | Buy Now |
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DISTI #
85985965
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Verical | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R Min Qty: 409 Package Multiple: 1 Date Code: 2201 | Americas - 2322 |
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$0.8291 / $0.9170 | Buy Now |
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DISTI #
87044885
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Verical | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R Min Qty: 409 Package Multiple: 1 Date Code: 2001 | Americas - 1382 |
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$0.8291 / $0.9170 | Buy Now |
Part Details for IPD034N06N3GATMA1
IPD034N06N3GATMA1 CAD Models
IPD034N06N3GATMA1 Part Data Attributes
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IPD034N06N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD034N06N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Select a part to compare: |
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, TO-252, 3 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 149 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0034 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD034N06N3GATMA1
This table gives cross-reference parts and alternative options found for IPD034N06N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD034N06N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB037N06N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPD034N06N3GATMA1 vs IPB037N06N3G |
| IPB90N06S4L04ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPD034N06N3GATMA1 vs IPB90N06S4L04ATMA1 |
| IPB034N06L3GATMA1 | Infineon Technologies AG | $1.0800 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPD034N06N3GATMA1 vs IPB034N06L3GATMA1 |
| IPP90N06S4L04AKSA2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPD034N06N3GATMA1 vs IPP90N06S4L04AKSA2 |
| IPB037N06N3GATMA1 | Infineon Technologies AG | $0.9480 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | IPD034N06N3GATMA1 vs IPB037N06N3GATMA1 |
| IPI90N06S4L04XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPD034N06N3GATMA1 vs IPI90N06S4L04XK |
| IPB034N06N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7 | IPD034N06N3GATMA1 vs IPB034N06N3G |
| IPD90N06S4L03ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | IPD034N06N3GATMA1 vs IPD90N06S4L03ATMA1 |
| IPB034N06N3GATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, D2PAK-7 | IPD034N06N3GATMA1 vs IPB034N06N3GATMA1 |