Datasheets
IPC100N04S51R2ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8, 8 PIN

Part Details for IPC100N04S51R2ATMA1 by Infineon Technologies AG

Overview of IPC100N04S51R2ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPC100N04S51R2ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 43AC3265
Newark Mosfet, N-Ch, 40V, 100A, 175Deg C, 150W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon IPC100N04S51R2ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2190
  • 1 $0.8640
  • 10 $0.8640
  • 25 $0.8640
  • 50 $0.8640
  • 100 $0.8640
  • 250 $0.8640
  • 500 $0.8640
  • 1,000 $0.8640
$0.8640 Buy Now
DISTI # 99AK9887
Newark Mosfet, N-Channel, 40V, 100A, Tdson Rohs Compliant: Yes |Infineon IPC100N04S51R2ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.1100
$1.1100 Buy Now
DISTI # IPC100N04S51R2ATMA1CT-ND
DigiKey MOSFET N-CH 40V 100A 8TDSON-34 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6897
In Stock
  • 1 $2.4600
  • 10 $2.0390
  • 100 $1.6233
  • 500 $1.3735
  • 1,000 $1.1654
  • 2,000 $1.1072
  • 5,000 $1.0655
$1.0655 / $2.4600 Buy Now
DISTI # 726-IPC100N04S51R2AT
Mouser Electronics MOSFET MOSFET_(20V 40V) RoHS: Compliant 19938
  • 1 $2.4500
  • 10 $1.9000
  • 100 $1.6200
  • 250 $1.4900
  • 500 $1.3500
  • 1,000 $1.1100
  • 5,000 $1.0300
$1.0300 / $2.4500 Buy Now
Future Electronics IPC100N04S5 Series 40 V 1.2 mOhm 100 A OptiMOS™-5 Power-Transistor-TDSON-8-34 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel 5000
Reel
  • 5,000 $1.0100
$1.0100 Buy Now
DISTI # 80316480
Verical Trans MOSFET N-CH 40V 100A Automotive AEC-Q101 8-Pin TDSON EP T/R Min Qty: 58 Package Multiple: 1 Americas - 2190
  • 58 $1.0537
$1.0537 Buy Now
Rochester Electronics MOSFET_(20V,40V) RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 3900
  • 1 $1.2000
  • 25 $1.1800
  • 100 $1.1300
  • 500 $1.0800
  • 1,000 $1.0200
$1.0200 / $1.2000 Buy Now
DISTI # SP001262620
EBV Elektronik MOSFET_(20V40V) (Alt: SP001262620) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 40V 100A 8TDSON-34 148930
  • 26 $1.9790
  • 62 $1.6240
  • 96 $1.5730
  • 132 $1.5220
  • 170 $1.4710
  • 228 $1.3190
$1.3190 / $1.9790 Buy Now

Part Details for IPC100N04S51R2ATMA1

IPC100N04S51R2ATMA1 CAD Models

IPC100N04S51R2ATMA1 Part Data Attributes

IPC100N04S51R2ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPC100N04S51R2ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 480 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPC100N04S51R2ATMA1

This table gives cross-reference parts and alternative options found for IPC100N04S51R2ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPC100N04S51R2ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPC100N04S5L-1R1 Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8, 8 PIN Infineon Technologies AG IPC100N04S51R2ATMA1 vs IPC100N04S5L-1R1

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