Part Details for IPC055N03L3X1SA1 by Infineon Technologies AG
Overview of IPC055N03L3X1SA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPC055N03L3X1SA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPC055N03L3X1SA1-ND
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DigiKey | MOSFET N-CH 30V 1A SAWN ON FOIL Min Qty: 25450 Lead time: 14 Weeks Container: Bulk | Temporarily Out of Stock |
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$0.5624 | Buy Now |
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DISTI #
IPC055N03L3X1SA1
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Avnet Americas | Trans MOSFET N-CH 30V DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IPC055N03L3X1SA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 0 Days Container: Waffle Pack | 20152 |
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$0.5624 | Buy Now |
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Future Electronics | OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 25450 Package Multiple: 1 Lead time: 14 Weeks Container: Die | 0Die |
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$0.5450 / $0.6650 | Buy Now |
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Future Electronics | OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 25450 Package Multiple: 1 Lead time: 14 Weeks Container: Die | 0Die |
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$0.5450 / $0.6650 | Buy Now |
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Future Electronics | OptiMOS 3 RoHS: Not Compliant pbFree: Yes Min Qty: 25450 Package Multiple: 1 Lead time: 14 Weeks Container: Die | 0Die |
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$0.5450 / $0.6650 | Buy Now |
Part Details for IPC055N03L3X1SA1
IPC055N03L3X1SA1 CAD Models
IPC055N03L3X1SA1 Part Data Attributes
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IPC055N03L3X1SA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPC055N03L3X1SA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | UNCASED CHIP, R-XXUC-N | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-N | |
| Number of Elements | 1 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |