Datasheets
IPB80P04P4-05 by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB80P04P4-05 by Infineon Technologies AG

Overview of IPB80P04P4-05 by Infineon Technologies AG

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Price & Stock for IPB80P04P4-05

Part # Distributor Description Stock Price Buy
CHIPMALL.COM LIMITED TO-263 MOSFETs ROHS 1000
  • 5 $2.7877
  • 50 $2.1967
  • 150 $1.9736
  • 500 $1.8710
  • 2,500 $1.8243
$1.8243 / $2.7877 Buy Now
LCSC TO-263 MOSFETs ROHS 1000
  • 1 $2.9039
  • 10 $2.5175
  • 30 $2.2882
  • 100 $2.0558
  • 500 $1.9490
  • 1,000 $1.9003
$1.9003 / $2.9039 Buy Now

Part Details for IPB80P04P4-05

IPB80P04P4-05 CAD Models

IPB80P04P4-05 Part Data Attributes

IPB80P04P4-05 Infineon Technologies AG
Buy Now Datasheet
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IPB80P04P4-05 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 64 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0052 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 320 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB80P04P4-05

This table gives cross-reference parts and alternative options found for IPB80P04P4-05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80P04P4-05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB80P04P405ATMA1 Power Field-Effect Transistor, 80A I(D), 40V, 0.0049ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG IPB80P04P4-05 vs IPB80P04P405ATMA1

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