IPB80N06S2L09ATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Overview of IPB80N06S2L09ATMA1 by Infineon Technologies AG

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Price & Stock for IPB80N06S2L09ATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IPB80N06S2L09ATMA1TR-ND
DigiKey MOSFET N-CH 55V 80A TO263-3 Lead time: 39 Weeks Container: Tape & Reel (TR) Limited Supply - Call
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Part Data Attributes for IPB80N06S2L09ATMA1 by Infineon Technologies AG

IPB80N06S2L09ATMA1
Infineon Technologies AG
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
370 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
80 A
Drain-source On Resistance-Max
0.011 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
320 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
Want to compare parts?
  1. IPB80N06S2L09ATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
    VS

Alternate Parts for IPB80N06S2L09ATMA1

This table gives cross-reference parts and alternative options found for IPB80N06S2L09ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N06S2L09ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPB80N06S2L-09 Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB80N06S2L09ATMA1 vs IPB80N06S2L-09
Part Number Description Manufacturer Compare
IPB80N06S2L-09 Power Field-Effect Transistor, 80A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB80N06S2L09ATMA1 vs IPB80N06S2L-09

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