Part Details for IPB80N04S3-H4 by Infineon Technologies AG
Results Overview of IPB80N04S3-H4 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPB80N04S3-H4 Information
IPB80N04S3-H4 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IPB80N04S3-H4
IPB80N04S3-H4 CAD Models
IPB80N04S3-H4 Part Data Attributes
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IPB80N04S3-H4
Infineon Technologies AG
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Datasheet
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IPB80N04S3-H4
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 370 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0048 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 115 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for IPB80N04S3-H4
This table gives cross-reference parts and alternative options found for IPB80N04S3-H4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N04S3-H4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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NP80N04PDG-E1B-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | IPB80N04S3-H4 vs NP80N04PDG-E1B-AY |
NP80N04PDG-E2B-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | IPB80N04S3-H4 vs NP80N04PDG-E2B-AY |
IPD90N04S4-05 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | IPB80N04S3-H4 vs IPD90N04S4-05 |
NP80N04MDG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25K, /Tube | IPB80N04S3-H4 vs NP80N04MDG-S18-AY |
IPB039N04LGATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80N04S3-H4 vs IPB039N04LGATMA1 |
NP80N04PUG-E1B-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | IPB80N04S3-H4 vs NP80N04PUG-E1B-AY |
IPB039N04LG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80N04S3-H4 vs IPB039N04LG |
TK80S04K3L | Toshiba America Electronic Components | Check for Price | TRANSISTOR POWER, FET, FET General Purpose Power | IPB80N04S3-H4 vs TK80S04K3L |
IPB80N04S3H4ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB80N04S3-H4 vs IPB80N04S3H4ATMA1 |
NP80N04NUG-S18-AY | Renesas Electronics Corporation | Check for Price | Power MOSFETs for Automotive, MP-25SK, /Tube | IPB80N04S3-H4 vs NP80N04NUG-S18-AY |