Datasheets
IPB80N04S3-H4 by:
Infineon Technologies AG
Hongxing Electrical Ltd
Infineon Technologies AG
Not Found

Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB80N04S3-H4 by Infineon Technologies AG

Results Overview of IPB80N04S3-H4 by Infineon Technologies AG

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IPB80N04S3-H4 Information

IPB80N04S3-H4 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPB80N04S3-H4

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IPB80N04S3-H4 Part Data Attributes

IPB80N04S3-H4 Infineon Technologies AG
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IPB80N04S3-H4 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 370 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0048 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IPB80N04S3-H4

This table gives cross-reference parts and alternative options found for IPB80N04S3-H4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N04S3-H4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NP80N04PDG-E1B-AY Renesas Electronics Corporation Check for Price Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape IPB80N04S3-H4 vs NP80N04PDG-E1B-AY
NP80N04PDG-E2B-AY Renesas Electronics Corporation Check for Price Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape IPB80N04S3-H4 vs NP80N04PDG-E2B-AY
IPD90N04S4-05 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 IPB80N04S3-H4 vs IPD90N04S4-05
NP80N04MDG-S18-AY Renesas Electronics Corporation Check for Price Power MOSFETs for Automotive, MP-25K, /Tube IPB80N04S3-H4 vs NP80N04MDG-S18-AY
IPB039N04LGATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80N04S3-H4 vs IPB039N04LGATMA1
NP80N04PUG-E1B-AY Renesas Electronics Corporation Check for Price Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape IPB80N04S3-H4 vs NP80N04PUG-E1B-AY
IPB039N04LG Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80N04S3-H4 vs IPB039N04LG
TK80S04K3L Toshiba America Electronic Components Check for Price TRANSISTOR POWER, FET, FET General Purpose Power IPB80N04S3-H4 vs TK80S04K3L
IPB80N04S3H4ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB80N04S3-H4 vs IPB80N04S3H4ATMA1
NP80N04NUG-S18-AY Renesas Electronics Corporation Check for Price Power MOSFETs for Automotive, MP-25SK, /Tube IPB80N04S3-H4 vs NP80N04NUG-S18-AY