Part Details for IPB77N06S212ATMA2 by Infineon Technologies AG
Overview of IPB77N06S212ATMA2 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB77N06S212ATMA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB77N06S212ATMA2
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Avnet Americas | Trans MOSFET N-CH 55V 77A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB77N06S212ATMA2) RoHS: Compliant Min Qty: 322 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 26000 Partner Stock |
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$0.9177 / $1.1300 | Buy Now |
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Rochester Electronics | IPB77N06S - OptiMOS 60V Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 26000 |
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$0.9636 / $1.1300 | Buy Now |
Part Details for IPB77N06S212ATMA2
IPB77N06S212ATMA2 CAD Models
IPB77N06S212ATMA2 Part Data Attributes
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IPB77N06S212ATMA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB77N06S212ATMA2
Infineon Technologies AG
Power Field-Effect Transistor, 77A I(D), 55V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 77 A | |
Drain-source On Resistance-Max | 0.0117 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 308 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB77N06S212ATMA2
This table gives cross-reference parts and alternative options found for IPB77N06S212ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB77N06S212ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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934059076127 | 75A, 55V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IPB77N06S212ATMA2 vs 934059076127 |