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Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB70N10S3L-12
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Mouser Electronics | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T RoHS: Compliant | 12095 |
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$1.2300 / $2.8500 | Buy Now |
DISTI #
79005905
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Verical | Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) D2PAK T/R Min Qty: 29 Package Multiple: 1 Date Code: 2201 | Americas - 7000 |
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$2.1333 / $2.6028 | Buy Now |
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Quest Components | 5600 |
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$2.3355 / $4.6710 | Buy Now | |
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Chip1Cloud | OptiMOS-T Power-Transistor | 27989 |
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RFQ | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2022 Date Code: 2022 | 7000 |
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$1.5570 / $4.4040 | Buy Now |
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Win Source Electronics | OptiMOS-T Power-Transistor | 22002 |
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$2.4500 / $3.6740 | Buy Now |
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IPB70N10S3L-12
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB70N10S3L-12
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 410 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 70 A | |
Drain-source On Resistance-Max | 0.0155 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 135 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 280 A | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101; IEC-68-1 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB70N10S3L-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB70N10S3L-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HUFA75645S3S | N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-REEL | onsemi | IPB70N10S3L-12 vs HUFA75645S3S |
IPB70N10S3-12 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPB70N10S3-12 |
IPD70N10S3-12 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPD70N10S3-12 |
IPI70N10S312XK | Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPI70N10S312XK |
IPD70N10S312ATMA1 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPB70N10S3L-12 vs IPD70N10S312ATMA1 |
IPB70N10S312XT | Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPB70N10S312XT |
IPD12CN10NGXT | Power Field-Effect Transistor, 67A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPD12CN10NGXT |
IPP70N10S3-12 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPP70N10S3-12 |
IXTP80N10T | Power Field-Effect Transistor, | Littelfuse Inc | IPB70N10S3L-12 vs IXTP80N10T |
IPP70N10S312AKSA1 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB70N10S3L-12 vs IPP70N10S312AKSA1 |