Part Details for IPB70N10S312ATMA1 by Infineon Technologies AG
Overview of IPB70N10S312ATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB70N10S312ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
50Y2015
|
Newark | Mosfet Transistor, N Channel, 70 A, 100 V, 0.0094 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IPB70N10S312ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
DISTI #
IPB70N10S312ATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 70A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
763 In Stock |
|
$1.2589 / $2.9000 | Buy Now |
|
DISTI #
726-IPB70N10S312ATMA
|
Mouser Electronics | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T RoHS: Compliant | 1541 |
|
$1.2200 / $2.9000 | Buy Now |
|
|
Future Electronics | Single N-Channel 100 V 11.3 mOhm 66 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$1.2500 / $1.2900 | Buy Now |
|
|
Rochester Electronics | IPB70N10S3-12 - 100V, N-Ch, Automotive MOSFET, RoHS: Compliant Status: Active Min Qty: 1 | 1440 |
|
$1.2100 / $1.4200 | Buy Now |
|
|
Ameya Holding Limited | Min Qty: 1000 | 720 |
|
$1.7750 / $1.8299 | Buy Now |
Part Details for IPB70N10S312ATMA1
IPB70N10S312ATMA1 CAD Models
IPB70N10S312ATMA1 Part Data Attributes:
|
|
IPB70N10S312ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB70N10S312ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.0113 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 158 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB70N10S312ATMA1
This table gives cross-reference parts and alternative options found for IPB70N10S312ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB70N10S312ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB120N10 | N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ, 800-REEL | onsemi | IPB70N10S312ATMA1 vs FDB120N10 |
| IPB70N10S3-12 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70N10S312ATMA1 vs IPB70N10S3-12 |
| IPB70N10S312XT | Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70N10S312ATMA1 vs IPB70N10S312XT |