Part Details for IPB70N10S3-12 by Infineon Technologies AG
Overview of IPB70N10S3-12 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB70N10S3-12
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
726-IPB70N10S312
|
Mouser Electronics | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T RoHS: Compliant | 510 |
|
$1.2500 / $2.8900 | Buy Now |
|
|
Bristol Electronics | Min Qty: 2 | 59 |
|
$1.6875 / $2.7000 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.0113OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 103 |
|
$1.3200 / $2.2000 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.0113OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 47 |
|
$1.3500 / $3.6000 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 100V, 0.0113OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 298 |
|
$2.3125 / $3.7500 | Buy Now |
|
|
Chip1Cloud | OptiMOS-T Power-Transistor | 20200 |
|
RFQ |
Part Details for IPB70N10S3-12
IPB70N10S3-12 CAD Models
IPB70N10S3-12 Part Data Attributes
|
|
IPB70N10S3-12
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB70N10S3-12
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.0113 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 158 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB70N10S3-12
This table gives cross-reference parts and alternative options found for IPB70N10S3-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB70N10S3-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB70N10S312XT | Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70N10S3-12 vs IPB70N10S312XT |
| FDB120N10 | N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ, 800-REEL | onsemi | IPB70N10S3-12 vs FDB120N10 |
| IPB70N10S312ATMA1 | Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB70N10S3-12 vs IPB70N10S312ATMA1 |