Part Details for IPB65R125C7ATMA1 by Infineon Technologies AG
Overview of IPB65R125C7ATMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPB65R125C7ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB65R125C7ATMA1-ND
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DigiKey | MOSFET N-CH 650V 18A D2PAK Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
DISTI #
IPB65R125C7ATMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 18A, 101W, PG-TO263-3 Min Qty: 1 | 0 |
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$3.4500 / $5.7300 | RFQ |
Part Details for IPB65R125C7ATMA1
IPB65R125C7ATMA1 CAD Models
IPB65R125C7ATMA1 Part Data Attributes
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IPB65R125C7ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB65R125C7ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 89 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 101 W | |
Pulsed Drain Current-Max (IDM) | 75 A | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB65R125C7ATMA1
This table gives cross-reference parts and alternative options found for IPB65R125C7ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R125C7ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB65R125C7 | Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPB65R125C7ATMA1 vs IPB65R125C7 |