Part Details for IPB65R110CFDA by Infineon Technologies AG
Results Overview of IPB65R110CFDA by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IPB65R110CFDA Information
IPB65R110CFDA by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB65R110CFDA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPB65R110CFDA
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Mouser Electronics | MOSFETs N-Ch 650V 99.6A D2PAK-2 RoHS: Compliant | 0 |
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$2.8100 / $2.8700 | Order Now |
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DISTI #
SP003559162
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EBV Elektronik | Trans MOSFET NCH 650V 312A 3Pin TO263 TR (Alt: SP003559162) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 650V 31.2A 110m10V12.7A 277.8W 4.5V 1 N-channel TO-263-3 MOSFETs ROHS | 1 |
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$6.2703 / $6.6350 | Buy Now |
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Win Source Electronics | Metal Oxide Semiconductor Field Effect Transistor | 18000 |
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$6.2441 / $8.0652 | Buy Now |
Part Details for IPB65R110CFDA
IPB65R110CFDA CAD Models
IPB65R110CFDA Part Data Attributes
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IPB65R110CFDA
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB65R110CFDA
Infineon Technologies AG
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2
Select a part to compare: |
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3/2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 845 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 31.2 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 99.6 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB65R110CFDA
This table gives cross-reference parts and alternative options found for IPB65R110CFDA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB65R110CFDA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NVB110N65S3F | onsemi | $4.4750 | Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL, Automotive Qualified | IPB65R110CFDA vs NVB110N65S3F |
| IPB65R110CFDAATMA1 | Infineon Technologies AG | $3.4995 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | IPB65R110CFDA vs IPB65R110CFDAATMA1 |
| NVHL110N65S3F | onsemi | $2.8566 | Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247, TO-247-3LD, 450-TUBE, Automotive Qualified | IPB65R110CFDA vs NVHL110N65S3F |