Part Details for IPB60R299CPAATMA1 by Infineon Technologies AG
Overview of IPB60R299CPAATMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPB60R299CPAATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
51AH7946
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Newark | Mosfet, Aec-Q101, N-Ch, 600V, 11A, 96W Rohs Compliant: Yes |Infineon IPB60R299CPAATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
85987287
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Verical | Trans MOSFET N-CH 600V 11A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 194 Package Multiple: 1 Date Code: 2301 | Americas - 3917 |
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$1.7500 / $1.9375 | Buy Now |
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DISTI #
75724682
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Verical | Trans MOSFET N-CH 600V 11A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 12 Package Multiple: 1 Date Code: 2315 | Americas - 1000 |
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$1.8750 / $2.6125 | Buy Now |
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Rochester Electronics | IPB60R299 - 600V-800V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$1.4000 / $1.6500 | Buy Now |
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DISTI #
C1S322000306578
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Chip1Stop | Trans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape | 1000 |
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$1.5500 / $2.8300 | Buy Now |
Part Details for IPB60R299CPAATMA1
IPB60R299CPAATMA1 CAD Models
IPB60R299CPAATMA1 Part Data Attributes
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IPB60R299CPAATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R299CPAATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.299 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB60R299CPAATMA1
This table gives cross-reference parts and alternative options found for IPB60R299CPAATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R299CPAATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB60R299CPATMA1 | Infineon Technologies AG | $1.3092 | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB60R299CPAATMA1 vs IPB60R299CPATMA1 |
| IPB60R299CPA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IPB60R299CPAATMA1 vs IPB60R299CPA |
| IPB60R280P7ATMA1 | Infineon Technologies AG | $1.4240 | Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | IPB60R299CPAATMA1 vs IPB60R280P7ATMA1 |
| FCB260N65S3 | onsemi | $2.8989 | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 12 A, 260 mΩ, D2PAK N-Channel SuperFET� III MOSFET 650 V, 12 A, 260 m?, D2PAK-3 / TO-263-2, 800-REEL | IPB60R299CPAATMA1 vs FCB260N65S3 |
| IPB60R280P7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | IPB60R299CPAATMA1 vs IPB60R280P7 |