Part Details for IPB60R280C6ATMA1 by Infineon Technologies AG
Overview of IPB60R280C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPB60R280C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 28 |
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RFQ | ||
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DISTI #
IPB60R280C6ATMA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 13.8A, 104W, PG-TO263-3 Min Qty: 1 | 0 |
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$1.2700 / $2.1200 | RFQ |
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LCSC | 600V 13.8A 104W 280m6.5A10V 3.5V430uA 1PCSNChannel TO-263-3 MOSFETs ROHS | 5 |
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$4.4933 / $6.1581 | Buy Now |
Part Details for IPB60R280C6ATMA1
IPB60R280C6ATMA1 CAD Models
IPB60R280C6ATMA1 Part Data Attributes:
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IPB60R280C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R280C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 284 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13.8 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB60R280C6ATMA1
This table gives cross-reference parts and alternative options found for IPB60R280C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R280C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXKH13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Littelfuse Inc | IPB60R280C6ATMA1 vs IXKH13N60C5 |
| IXKH13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IPB60R280C6ATMA1 vs IXKH13N60C5 |
| IXKP13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Littelfuse Inc | IPB60R280C6ATMA1 vs IXKP13N60C5 |
| TK14N65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R280C6ATMA1 vs TK14N65W5 |
| IXKP13N60C5 | Power Field-Effect Transistor, 13A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IPB60R280C6ATMA1 vs IXKP13N60C5 |
| STW18N60M2 | N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package | STMicroelectronics | IPB60R280C6ATMA1 vs STW18N60M2 |
| TK14E65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R280C6ATMA1 vs TK14E65W5 |
| IPB60R280C6 | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB60R280C6ATMA1 vs IPB60R280C6 |
| R6015ENJTL | Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | IPB60R280C6ATMA1 vs R6015ENJTL |
| STB18N60M2 | N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in D2PAK package | STMicroelectronics | IPB60R280C6ATMA1 vs STB18N60M2 |