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Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB60R199CPATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 16A TO263-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5248 In Stock |
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$1.8671 / $4.0000 | Buy Now |
DISTI #
IPB60R199CPATMA1
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Avnet Americas | Trans MOSFET N-CH 650V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$2.0128 / $2.4602 | Buy Now |
DISTI #
726-IPB60R199CPATMA1
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Mouser Electronics | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | Single N-Channel 650 V 199 mOhm 32 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 0Reel |
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$1.9100 / $1.9600 | Buy Now |
DISTI #
IPB60R199CPATMA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 16A, 139W, PG-TO263-3 Min Qty: 1 | 0 |
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$2.1200 / $3.5400 | RFQ |
DISTI #
SP000223256
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EBV Elektronik | Trans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: SP000223256) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IPB60R199CPATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R199CPATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB60R199CPATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R199CPATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB60R199CPXT | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R199CPATMA1 vs IPB60R199CPXT |
IPB60R199CPAATMA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R199CPATMA1 vs IPB60R199CPAATMA1 |
TK16J60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R199CPATMA1 vs TK16J60W |
TK16E60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R199CPATMA1 vs TK16E60W |