Part Details for IPB60R199CPAATMA1 by Infineon Technologies AG
Overview of IPB60R199CPAATMA1 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB60R199CPAATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB60R199CPAATMA1-ND
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DigiKey | MOSFET N-CH 600V 16A D2PAK Min Qty: 1000 Lead time: 15 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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$1.7688 | Buy Now |
DISTI #
IPB60R199CPAATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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RFQ | |
DISTI #
SP000539966
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EBV Elektronik | Trans MOSFET N-CH 600V 16A 3-Pin TO-263 T/R (Alt: SP000539966) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 71 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB60R199CPAATMA1
IPB60R199CPAATMA1 CAD Models
IPB60R199CPAATMA1 Part Data Attributes
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IPB60R199CPAATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R199CPAATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB60R199CPAATMA1
This table gives cross-reference parts and alternative options found for IPB60R199CPAATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R199CPAATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB60R199CPXT | Infineon Technologies AG | $1.5900 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB60R199CPAATMA1 vs IPB60R199CPXT |
IPB60R199CPATMA1 | Infineon Technologies AG | $1.6965 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB60R199CPAATMA1 vs IPB60R199CPATMA1 |
TK16J60W | Toshiba America Electronic Components | Check for Price | Nch 500V<VDSS≤700V | IPB60R199CPAATMA1 vs TK16J60W |