Datasheets
IPB60R199CPAATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB60R199CPAATMA1 by Infineon Technologies AG

Overview of IPB60R199CPAATMA1 by Infineon Technologies AG

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Price & Stock for IPB60R199CPAATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPB60R199CPAATMA1-ND
DigiKey MOSFET N-CH 600V 16A D2PAK Min Qty: 1000 Lead time: 15 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 1,000 $1.7688
$1.7688 Buy Now
DISTI # IPB60R199CPAATMA1
Avnet Americas Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
RFQ
DISTI # SP000539966
EBV Elektronik Trans MOSFET N-CH 600V 16A 3-Pin TO-263 T/R (Alt: SP000539966) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 71 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPB60R199CPAATMA1

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IPB60R199CPAATMA1 Part Data Attributes

IPB60R199CPAATMA1 Infineon Technologies AG
Buy Now Datasheet
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IPB60R199CPAATMA1 Infineon Technologies AG Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 436 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.199 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 51 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB60R199CPAATMA1

This table gives cross-reference parts and alternative options found for IPB60R199CPAATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R199CPAATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB60R199CPXT Infineon Technologies AG $1.5900 Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB60R199CPAATMA1 vs IPB60R199CPXT
IPB60R199CPATMA1 Infineon Technologies AG $1.6965 Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IPB60R199CPAATMA1 vs IPB60R199CPATMA1
TK16J60W Toshiba America Electronic Components Check for Price Nch 500V<VDSS≤700V IPB60R199CPAATMA1 vs TK16J60W

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