Part Details for IPB60R160C6ATMA1 by Infineon Technologies AG
Overview of IPB60R160C6ATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB60R160C6ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30T1829
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Newark | Mosfet, n Ch,600V,23.8A, to263, Transistor Polarity:N Channel, Continuous Drain Current Id:23.8A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.14Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation Rohs Compliant: Yes |Infineon IPB60R160C6ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$2.5300 / $4.1800 | Buy Now |
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DISTI #
IPB60R160C6ATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 23.8A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5782 In Stock |
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$1.8228 / $3.9000 | Buy Now |
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DISTI #
IPB60R160C6ATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R160C6ATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$1.9686 / $2.4060 | Buy Now |
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DISTI #
726-IPB60R160C6ATMA1
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Mouser Electronics | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 RoHS: Compliant | 0 |
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Order Now | |
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Future Electronics | Single N-Channel 600 V 160 mOhm 75 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 0Reel |
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$2.2900 / $2.3500 | Buy Now |
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Bristol Electronics | 53 |
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RFQ | ||
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DISTI #
IPB60R160C6ATMA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 23.8A, 176W, PG-TO263-3 Min Qty: 1 | 0 |
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$2.0800 / $3.4700 | RFQ |
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DISTI #
SP000687552
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EBV Elektronik | Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) TO-263 (Alt: SP000687552) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB60R160C6ATMA1
IPB60R160C6ATMA1 CAD Models
IPB60R160C6ATMA1 Part Data Attributes
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IPB60R160C6ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R160C6ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 497 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 23.8 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB60R160C6ATMA1
This table gives cross-reference parts and alternative options found for IPB60R160C6ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R160C6ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXKH24N60C5 | Power Field-Effect Transistor, | Littelfuse Inc | IPB60R160C6ATMA1 vs IXKH24N60C5 |
| SIHG23N60E-GE3 | Power Field-Effect Transistor, 23A I(D), 600V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | IPB60R160C6ATMA1 vs SIHG23N60E-GE3 |
| IXKP24N60C5 | Power Field-Effect Transistor, | Littelfuse Inc | IPB60R160C6ATMA1 vs IXKP24N60C5 |
| IXKP24N60C5 | Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IPB60R160C6ATMA1 vs IXKP24N60C5 |
| SIHG22N65E-GE3 | Power Field-Effect Transistor, 22A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | IPB60R160C6ATMA1 vs SIHG22N65E-GE3 |
| R6024ENJTL | Power Field-Effect Transistor, 24A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN | ROHM Semiconductor | IPB60R160C6ATMA1 vs R6024ENJTL |
| TK25V60X5 | Nch 500V<VDSS≤700V, Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R160C6ATMA1 vs TK25V60X5 |
| IPB60R160C6 | Power Field-Effect Transistor, 23.8A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB60R160C6ATMA1 vs IPB60R160C6 |