Part Details for IPB200N15N3GATMA1 by Infineon Technologies AG
Overview of IPB200N15N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB200N15N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2679
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Newark | Mosfet, N Ch, 150V, 50A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB200N15N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1529 |
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$1.9000 / $3.1500 | Buy Now |
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DISTI #
IPB200N15N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 50A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1402 In Stock |
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$1.4144 / $3.0300 | Buy Now |
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DISTI #
IPB200N15N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB200N15N3GATMA1) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$1.2729 / $1.5558 | Buy Now |
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DISTI #
V72:2272_06383118
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Arrow Electronics | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2308 Container: Cut Strips | Americas - 438 |
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$1.2710 / $1.9120 | Buy Now |
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Future Electronics | Single N-Channel 150 V 20 mOhm 23 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 1000Reel |
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$0.7900 / $0.8500 | Buy Now |
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Future Electronics | Single N-Channel 150 V 20 mOhm 23 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 0Reel |
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$1.2900 / $1.3400 | Buy Now |
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DISTI #
69266526
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Verical | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 15 Package Multiple: 1 Date Code: 2307 | Americas - 1950 |
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$1.6125 / $2.1125 | Buy Now |
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DISTI #
69123004
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Verical | Trans MOSFET N-CH 150V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2308 | Americas - 438 |
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$1.2710 / $1.9120 | Buy Now |
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DISTI #
IPB200N15N3GATMA1
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TME | Transistor: N-MOSFET, unipolar, 120V, 45A, 78W, PG-TO263-3 Min Qty: 1 | 0 |
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$1.2200 / $2.0500 | RFQ |
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Ameya Holding Limited | Min Qty: 1000 | 21268 |
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$1.9196 / $1.9790 | Buy Now |
Part Details for IPB200N15N3GATMA1
IPB200N15N3GATMA1 CAD Models
IPB200N15N3GATMA1 Part Data Attributes
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IPB200N15N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB200N15N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB200N15N3GATMA1
This table gives cross-reference parts and alternative options found for IPB200N15N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB200N15N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD86250 | N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 51 A, 22 mΩ, 2500-REEL | onsemi | IPB200N15N3GATMA1 vs FDD86250 |
| IPD200N15N3G | Power Field-Effect Transistor, 50A I(D), 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3 | Infineon Technologies AG | IPB200N15N3GATMA1 vs IPD200N15N3G |