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Transistors / Power Field-Effect Transistors / IPB180N04S4-H0
Datasheets
IPB180N04S4-H0 by: Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN

Part Details for IPB180N04S4-H0 by Infineon Technologies AG

Overview of IPB180N04S4-H0 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB180N04S4-H0

Part # Distributor Description Stock Price Buy
DISTI # IPB180N04S4H0ATMA1
Avnet Americas Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N04S4H0ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPB180N04S4-H0
Mouser Electronics MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS-T2 RoHS: Compliant 1000
  • 1 $2.9400
  • 10 $2.4700
  • 25 $2.3300
  • 100 $2.0000
  • 250 $1.8800
  • 500 $1.7700
  • 1,000 $1.5200
  • 2,000 $1.4300
  • 5,000 $1.3700
$1.3700 / $2.9400 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 180A I(D), 40V, 0.0011OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 3000
  • 1 $4.5675
  • 1,096 $1.6748
  • 1,792 $1.5986
$1.5986 / $4.5675 Buy Now

Part Details for IPB180N04S4-H0

IPB180N04S4-H0 CAD Models

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IPB180N04S4-H0 Part Data Attributes

Parametric Data
IPB180N04S4-H0 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB180N04S4-H0 Infineon Technologies AG Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-263
Package Description GREEN, PLASTIC, TO-263, 7 PIN
Pin Count 7
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 850 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 720 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPB180N04S4-H0

This table gives cross-reference parts and alternative options found for IPB180N04S4-H0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N04S4-H0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB180N04S4L-01 Power Field-Effect Transistor, 180A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7/6 PIN Infineon Technologies AG IPB180N04S4-H0 vs IPB180N04S4L-01
IPB180N04S401ATMA1 Power Field-Effect Transistor, 180A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 Infineon Technologies AG IPB180N04S4-H0 vs IPB180N04S401ATMA1
IPB011N04NG Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN Infineon Technologies AG IPB180N04S4-H0 vs IPB011N04NG
IPB180N04S4-01 Power Field-Effect Transistor, 180A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN Infineon Technologies AG IPB180N04S4-H0 vs IPB180N04S4-01
IPB180N04S4H0ATMA1 Power Field-Effect Transistor, 180A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 Infineon Technologies AG IPB180N04S4-H0 vs IPB180N04S4H0ATMA1

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