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Power Field-Effect Transistor, 180A I(D), 80V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB180N08S402ATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 180A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
78 In Stock |
|
$2.6931 / $5.6900 | Buy Now |
DISTI #
IPB180N08S402ATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N08S402ATMA1) RoHS: Compliant Min Qty: 117 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 6390 Partner Stock |
|
$2.6700 / $3.1400 | Buy Now |
DISTI #
75724657
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Verical | Trans MOSFET N-CH 80V 180A Automotive AEC-Q101 7-Pin(6+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2318 | Americas - 7000 |
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$3.6000 / $7.6375 | Buy Now |
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Rochester Electronics | XPB180N08 - MOSFET N-Channel Single 80V 180A RoHS: Compliant Status: Obsolete Min Qty: 1 | 7390 |
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$2.6700 / $3.1400 | Buy Now |
DISTI #
C1S322000402535
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Chip1Stop | Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape | 7000 |
|
$2.8800 / $6.1100 | Buy Now |
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IPB180N08S402ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB180N08S402ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 80V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 640 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0022 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB180N08S402ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB180N08S402ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB180N08S4-02 | Power Field-Effect Transistor, 180A I(D), 80V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, | Infineon Technologies AG | IPB180N08S402ATMA1 vs IPB180N08S4-02 |