Part Details for IPB160N04S3-H2 by Infineon Technologies AG
Overview of IPB160N04S3-H2 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB160N04S3-H2
IPB160N04S3-H2 CAD Models
IPB160N04S3-H2 Part Data Attributes
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IPB160N04S3-H2
Infineon Technologies AG
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Datasheet
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IPB160N04S3-H2
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-263 | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 898 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 160 A | |
Drain-source On Resistance-Max | 0.0021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 214 W | |
Pulsed Drain Current-Max (IDM) | 640 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB160N04S3-H2
This table gives cross-reference parts and alternative options found for IPB160N04S3-H2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB160N04S3-H2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STI300N4F6 | N-channel 40 V, 1.7 mOhm typ., 160 A STripFET F6 Power MOSFET in an I2PAK package | STMicroelectronics | IPB160N04S3-H2 vs STI300N4F6 |
IPB160N04S4-02D | Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7 | Infineon Technologies AG | IPB160N04S3-H2 vs IPB160N04S4-02D |
TK150F04K3 | TRANSISTOR 150 A, 40 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10W1A, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IPB160N04S3-H2 vs TK150F04K3 |
IPB160N04S402DXTMA1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB160N04S3-H2 vs IPB160N04S402DXTMA1 |
IPB160N04S3H2ATMA1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB160N04S3-H2 vs IPB160N04S3H2ATMA1 |