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Part Details for IPB123N10N3GATMA1 by Infineon Technologies AG
Overview of IPB123N10N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB123N10N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
85X6018
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Newark | Mosfet, N-Ch, 100V, 58A, 175Deg C, 94W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:58A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPB123N10N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.1200 / $1.9700 | Buy Now |
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DISTI #
86AK5170
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Newark | Mosfet, N-Ch, 100V, 58A, To-263 Rohs Compliant: Yes |Infineon IPB123N10N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.8860 / $0.9770 | Buy Now |
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DISTI #
IPB123N10N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 58A D2PAK Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3254 In Stock |
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$0.7444 / $2.5000 | Buy Now |
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DISTI #
IPB123N10N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel | 1000 |
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RFQ | |
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DISTI #
726-IPB123N10N3GATMA
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Mouser Electronics | MOSFETs N-Ch 100V 58A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1634 |
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$0.7440 / $1.8000 | Buy Now |
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DISTI #
E02:0323_00274613
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Arrow Electronics | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Date Code: 2437 | Europe - 22000 |
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$0.7470 | Buy Now |
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DISTI #
V72:2272_06383732
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Arrow Electronics | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2313 Container: Cut Strips | Americas - 664 |
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$0.6866 / $1.5971 | Buy Now |
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Future Electronics | IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Container: Reel | 5000Reel |
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$0.6750 / $0.7250 | Buy Now |
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Future Electronics | IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 1000Reel |
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$0.6750 / $0.7250 | Buy Now |
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DISTI #
84942691
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Verical | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2437 | Americas - 22000 |
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$1.0654 | Buy Now |
Part Details for IPB123N10N3GATMA1
IPB123N10N3GATMA1 CAD Models
IPB123N10N3GATMA1 Part Data Attributes
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IPB123N10N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB123N10N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 58A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 70 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.0123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 232 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB123N10N3GATMA1
This table gives cross-reference parts and alternative options found for IPB123N10N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB123N10N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD60N10S4-12 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN | Infineon Technologies AG | IPB123N10N3GATMA1 vs IPD60N10S4-12 |