Part Details for IPB120N08S403ATMA1 by Infineon Technologies AG
Overview of IPB120N08S403ATMA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for IPB120N08S403ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
62AK5491
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Newark | Mosfet, N-Ch, 120A, To-263 Rohs Compliant: Yes |Infineon IPB120N08S403ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
71241110
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Verical | Trans MOSFET N-CH 80V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2247 | Americas - 6949 |
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$3.4625 / $6.9250 | Buy Now |
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Bristol Electronics | 1000 |
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RFQ | ||
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Rochester Electronics | IPB120N08 - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 7301 |
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$2.6300 / $3.0900 | Buy Now |
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DISTI #
C1S322001060442
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 6949 |
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$2.8300 / $5.6500 | Buy Now |
Part Details for IPB120N08S403ATMA1
IPB120N08S403ATMA1 CAD Models
IPB120N08S403ATMA1 Part Data Attributes
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IPB120N08S403ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB120N08S403ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 920 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB120N08S403ATMA1
This table gives cross-reference parts and alternative options found for IPB120N08S403ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N08S403ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB025N08N3GXT | Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB120N08S403ATMA1 vs IPB025N08N3GXT |
| IPP120N08S4-03 | Power Field-Effect Transistor, 120A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB120N08S403ATMA1 vs IPP120N08S4-03 |
| IPP027N08N5 | Power Field-Effect Transistor, 120A I(D), 80V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IPB120N08S403ATMA1 vs IPP027N08N5 |
| IPB025N08N3G | Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB120N08S403ATMA1 vs IPB025N08N3G |