Datasheets
IPB09N03LAG by: Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

Part Details for IPB09N03LAG by Infineon Technologies AG

Results Overview of IPB09N03LAG by Infineon Technologies AG

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Applications Automotive

IPB09N03LAG Information

IPB09N03LAG by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPB09N03LAG

IPB09N03LAG CAD Models

IPB09N03LAG Part Data Attributes

IPB09N03LAG Infineon Technologies AG
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IPB09N03LAG Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 25V, 0.0151ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 75 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0151 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 350 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IPB09N03LAG Related Parts

IPB09N03LAG Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPB09N03LAG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings specified in the datasheet. Typically, a gate-source voltage (Vgs) of 10-15V and a drain-source voltage (Vds) of 30-40V are recommended. Additionally, ensure the device is properly cooled to prevent overheating.

  • For optimal thermal management, it's recommended to use a PCB with a thermal pad and a heat sink. Ensure the thermal pad is connected to a solid ground plane and the heat sink is properly attached to the device. A good PCB layout should also minimize parasitic inductance and capacitance.

  • To protect the device from overvoltage and overcurrent conditions, use a voltage regulator or a voltage limiter to ensure the input voltage stays within the recommended range. Additionally, consider using a current sense resistor and a fuse to detect and prevent overcurrent conditions.

  • The recommended gate driver for IPB09N03LAG is typically a high-current, low-impedance driver with a voltage rating that matches the device's Vgs rating. Examples include the Infineon Technologies AG's 1EDC and 2EDC gate driver families.