Part Details for IPB091N06NG by Infineon Technologies AG
Overview of IPB091N06NG by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB091N06NG
IPB091N06NG CAD Models
IPB091N06NG Part Data Attributes
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IPB091N06NG
Infineon Technologies AG
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Datasheet
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IPB091N06NG
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 370 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 188 W | |
| Pulsed Drain Current-Max (IDM) | 320 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB091N06NG
This table gives cross-reference parts and alternative options found for IPB091N06NG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB091N06NG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NP80N06MLG-S18-AY | Power MOSFETs for Automotive, MP-25K, /Tube | Renesas Electronics Corporation | IPB091N06NG vs NP80N06MLG-S18-AY |
| FS70VSH-06-T1 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN | Mitsubishi Electric | IPB091N06NG vs FS70VSH-06-T1 |
| BUK95608-55A | TRANSISTOR 75 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | IPB091N06NG vs BUK95608-55A |
| IPB80N06S3L-05 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB091N06NG vs IPB80N06S3L-05 |
| FS70VS-06-T2 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN | Mitsubishi Electric | IPB091N06NG vs FS70VS-06-T2 |
| BUK7508-55127 | TRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IPB091N06NG vs BUK7508-55127 |
| IRL3705ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IPB091N06NG vs IRL3705ZS |
| BUK96608-55A | TRANSISTOR 75 A, 55 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IPB091N06NG vs BUK96608-55A |
| TK80S06K3L | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | IPB091N06NG vs TK80S06K3L |
| FS70VSJ-06-T1 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Mitsubishi Electric | IPB091N06NG vs FS70VSJ-06-T1 |