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Power Field-Effect Transistor, 80A I(D), 100V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47Y8048
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Newark | Mosfet, N-Ch, 100V, 80A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:80A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.7V Rohs Compliant: Yes |Infineon IPB083N10N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 57 |
|
$0.6570 | Buy Now |
DISTI #
86AK5163
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Newark | Mosfet, N-Ch, 100V, 80A, To-263 Rohs Compliant: Yes |Infineon IPB083N10N3GATMA1 Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.7100 / $0.7830 | Buy Now |
DISTI #
IPB083N10N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 80A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3382 In Stock |
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$0.6831 / $1.6300 | Buy Now |
DISTI #
IPB083N10N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB083N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 15000 |
|
$0.6148 / $0.7514 | Buy Now |
DISTI #
47Y8048
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Avnet Americas | Power MOSFET, N Channel, 100 V, 80 A, 0.0072 ohm, TO-263 (D2PAK), Surface Mount - Product that comes on tape, but is not reeled (Alt: 47Y8048) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 57 Partner Stock |
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$1.1400 / $1.7000 | Buy Now |
DISTI #
726-IPB083N10N3GATMA
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Mouser Electronics | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1750 |
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$0.6830 / $1.6300 | Buy Now |
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Future Electronics | Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 1000Reel |
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$0.6950 / $0.7450 | Buy Now |
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Future Electronics | Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$0.6950 / $0.7450 | Buy Now |
DISTI #
77797485
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Verical | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2326 | Americas - 14000 |
|
$0.7713 | Buy Now |
DISTI #
71240547
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Verical | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 26 Package Multiple: 1 Date Code: 2329 | Americas - 746 |
|
$0.9688 / $1.2425 | Buy Now |
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IPB083N10N3GATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB083N10N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 100V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 110 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0083 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB083N10N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB083N10N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD082N10N3GXT | Power Field-Effect Transistor, 80A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3 | Infineon Technologies AG | IPB083N10N3GATMA1 vs IPD082N10N3GXT |