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Transistors / Power Field-Effect Transistors / IPB081N06L3GATMA1
Datasheets
IPB081N06L3GATMA1 by:

Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Part Details for IPB081N06L3GATMA1 by Infineon Technologies AG

Overview of IPB081N06L3GATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPB081N06L3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 60R2670
Newark Mosfet, N Channel, 60V, 50A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPB081N06L3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 3555
  • 1 $1.7000
  • 10 $1.3900
  • 100 $1.0800
  • 500 $0.9200
  • 1,000 $0.7500
  • 3,000 $0.7050
  • 10,000 $0.6410
$0.6410 / $1.7000 Buy Now
DISTI # IPB081N06L3GATMA1CT-ND
DigiKey MOSFET N-CH 60V 50A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5016
In Stock
  • 1 $1.6400
  • 10 $1.3430
  • 100 $1.0444
  • 500 $0.8852
  • 1,000 $0.7211
  • 2,000 $0.6788
  • 5,000 $0.6465
  • 10,000 $0.6167
$0.6167 / $1.6400 Buy Now
DISTI # IPB081N06L3GATMA1
Avnet Americas Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB081N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.6770
  • 2,000 $0.6565
  • 4,000 $0.6360
  • 6,000 $0.6155
  • 8,000 $0.5949
  • 10,000 $0.5744
  • 100,000 $0.5539
$0.5539 / $0.6770 Buy Now
DISTI # 726-IPB081N06L3GATMA
Mouser Electronics MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant 1122
  • 1 $1.6400
  • 10 $1.3400
  • 100 $0.9420
  • 500 $0.8650
  • 1,000 $0.7210
  • 2,000 $0.6780
  • 5,000 $0.6460
  • 10,000 $0.6160
$0.6160 / $1.6400 Buy Now
DISTI # E02:0323_00275447
Arrow Electronics Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Date Code: 2404 Europe - 25000
  • 1,000 $0.6008
  • 3,000 $0.5770
  • 10,000 $0.5480
$0.5480 / $0.6008 Buy Now
DISTI # V72:2272_06384674
Arrow Electronics Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2336 Container: Cut Strips Americas - 281
  • 1 $1.5974
  • 10 $1.3138
  • 25 $1.3033
  • 100 $0.9317
  • 250 $0.6130
$0.6130 / $1.5974 Buy Now
Future Electronics IPB081N06L3G Series 60 V 50 A 8.4 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks Container: Reel 2000
Reel
  • 1,000 $0.5950
  • 2,000 $0.5850
  • 3,000 $0.5750
  • 5,000 $0.5650
  • 10,000 $0.5450
$0.5450 / $0.5950 Buy Now
Future Electronics IPB081N06L3G Series 60 V 50 A 8.4 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Lead time: 22 Weeks Container: Reel 0
Reel
  • 1,000 $0.5900
  • 2,000 $0.5750
  • 3,000 $0.5700
  • 4,000 $0.5650
  • 5,000 $0.5450
$0.5450 / $0.5900 Buy Now
DISTI # 79002175
Verical Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2404 Americas - 25000
  • 1,000 $0.6014
  • 3,000 $0.5775
  • 10,000 $0.5485
$0.5485 / $0.6014 Buy Now
DISTI # 70395235
Verical Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R Min Qty: 12 Package Multiple: 1 Date Code: 2336 Americas - 281
  • 12 $1.3138
  • 25 $1.3033
  • 100 $0.9317
  • 250 $0.6130
$0.6130 / $1.3138 Buy Now
Ameya Holding Limited   Min Qty: 1000 700
  • 1,000 $0.8638
  • 5,000 $0.8380
$0.8380 / $0.8638 Buy Now
Ameya Holding Limited   327
RFQ
Chip1Cloud MOSFET N-CH 60V 50A D2PAK 3380
RFQ
DISTI # SP000398076
EBV Elektronik Power MOSFET, N Channel, 60 V, 50 A, 0.0067 ohm, TO-263 (D2PAK), Surface Mount (Alt: SP000398076) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 1000
  • 1,000 $0.6970
$0.6970 Buy Now

Part Details for IPB081N06L3GATMA1

IPB081N06L3GATMA1 CAD Models

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IPB081N06L3GATMA1 Part Data Attributes

Parametric Data
IPB081N06L3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB081N06L3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 43 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0081 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB081N06L3GATMA1

This table gives cross-reference parts and alternative options found for IPB081N06L3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB081N06L3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD50N06S3-09 Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPB081N06L3GATMA1 vs IPD50N06S3-09
IPD50N06S309ATMA1 Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPB081N06L3GATMA1 vs IPD50N06S309ATMA1
IPD50N06S409ATMA1 Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPB081N06L3GATMA1 vs IPD50N06S409ATMA1
IPB090N06N3G Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB081N06L3GATMA1 vs IPB090N06N3G
AON7244 Power Field-Effect Transistor, 50A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, GREEN, EP, DFN-8 Alpha & Omega Semiconductor IPB081N06L3GATMA1 vs AON7244
IPB090N06N3GATMA1 Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG IPB081N06L3GATMA1 vs IPB090N06N3GATMA1

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