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Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y2005
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Newark | Mosfet Transistor, N Channel, 80 A, 80 V, 0.0046 Ohm, 10 V, 2.8 V Rohs Compliant: Yes |Infineon IPB054N08N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.9400 / $1.9800 | Buy Now |
DISTI #
IPB054N08N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 80V 80A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3638 In Stock |
|
$0.7995 / $2.6200 | Buy Now |
DISTI #
IPB054N08N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
726-IPB054N08N3GATMA
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Mouser Electronics | MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant | 3217 |
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$0.7890 / $1.6400 | Buy Now |
DISTI #
V36:1790_06383364
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Arrow Electronics | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2304 | Americas - 6000 |
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$0.4727 / $0.6384 | Buy Now |
DISTI #
V72:2272_06383364
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Arrow Electronics | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2326 Container: Cut Strips | Americas - 356 |
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$0.7142 / $1.0300 | Buy Now |
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Future Electronics | Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 6000Reel |
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$0.7000 / $0.7550 | Buy Now |
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Future Electronics | Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 1000Reel |
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$0.7000 / $0.7550 | Buy Now |
DISTI #
66922514
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Verical | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2304 | Americas - 6000 |
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$0.4727 / $0.4823 | Buy Now |
DISTI #
82724043
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Verical | Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 29 Package Multiple: 1 Date Code: 2425 | Americas - 990 |
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$1.0688 / $1.0975 | Buy Now |
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IPB054N08N3GATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB054N08N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0054 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |