Datasheets
IPB054N08N3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3

Part Details for IPB054N08N3GATMA1 by Infineon Technologies AG

Overview of IPB054N08N3GATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPB054N08N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 50Y2005
Newark Mosfet Transistor, N Channel, 80 A, 80 V, 0.0046 Ohm, 10 V, 2.8 V Rohs Compliant: Yes |Infineon IPB054N08N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.9800
  • 10 $1.6400
  • 25 $1.5300
  • 50 $1.4100
  • 100 $1.3000
  • 250 $1.2100
  • 500 $1.0900
  • 1,000 $0.9400
$0.9400 / $1.9800 Buy Now
DISTI # IPB054N08N3GATMA1CT-ND
DigiKey MOSFET N-CH 80V 80A D2PAK Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3638
In Stock
  • 1 $2.6200
  • 10 $1.6950
  • 100 $1.1651
  • 500 $0.9379
  • 1,000 $0.8647
  • 2,000 $0.8032
  • 3,000 $0.7995
$0.7995 / $2.6200 Buy Now
DISTI # IPB054N08N3GATMA1
Avnet Americas Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPB054N08N3GATMA
Mouser Electronics MOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant 3217
  • 1 $1.6400
  • 10 $1.2900
  • 100 $1.0100
  • 250 $0.9310
  • 500 $0.8250
  • 1,000 $0.7990
  • 10,000 $0.7890
$0.7890 / $1.6400 Buy Now
DISTI # V36:1790_06383364
Arrow Electronics Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2304 Americas - 6000
  • 0 $0.6384
  • 1,000 $0.4823
  • 2,000 $0.4775
  • 3,000 $0.4727
$0.4727 / $0.6384 Buy Now
DISTI # V72:2272_06383364
Arrow Electronics Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2326 Container: Cut Strips Americas - 356
  • 1 $1.0300
  • 10 $0.9448
  • 25 $0.9388
  • 100 $0.8533
  • 250 $0.7142
$0.7142 / $1.0300 Buy Now
Future Electronics Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 6000
Reel
  • 1,000 $0.7550
  • 2,000 $0.7400
  • 3,000 $0.7300
  • 4,000 $0.7200
  • 5,000 $0.7000
$0.7000 / $0.7550 Buy Now
Future Electronics Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 1000
Reel
  • 1,000 $0.7550
  • 2,000 $0.7400
  • 3,000 $0.7300
  • 4,000 $0.7200
  • 5,000 $0.7000
$0.7000 / $0.7550 Buy Now
DISTI # 66922514
Verical Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2304 Americas - 6000
  • 1,000 $0.4823
  • 2,000 $0.4775
  • 3,000 $0.4727
$0.4727 / $0.4823 Buy Now
DISTI # 82724043
Verical Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 29 Package Multiple: 1 Date Code: 2425 Americas - 990
  • 29 $1.0975
  • 50 $1.0938
  • 100 $1.0738
  • 200 $1.0713
  • 500 $1.0688
$1.0688 / $1.0975 Buy Now
DISTI # 69258719
Verical Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R Min Qty: 9 Package Multiple: 1 Date Code: 2326 Americas - 356
  • 10 $0.9448
  • 25 $0.9388
  • 100 $0.8533
  • 250 $0.7142
$0.7142 / $0.9448 Buy Now
DISTI # IPB054N08N3GATMA1
TME Transistor: N-MOSFET, unipolar, 80V, 80A, 150W, PG-TO263-3 Min Qty: 1 0
  • 1 $1.7500
  • 5 $1.5500
  • 25 $1.3900
  • 100 $1.2900
  • 250 $1.2000
$1.2000 / $1.7500 RFQ
DISTI # C1S322001393517
Chip1Stop MOSFET RoHS: Compliant 6000
  • 1,000 $0.6100
$0.6100 Buy Now
DISTI # C1S322000088292
Chip1Stop Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape 990
  • 1 $0.8810
  • 10 $0.8780
  • 50 $0.8750
  • 100 $0.8590
  • 200 $0.8570
  • 500 $0.8550
$0.8550 / $0.8810 Buy Now
DISTI # C1S322000650187
Chip1Stop Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant 356
  • 1 $1.0400
  • 10 $0.9448
  • 25 $0.9388
  • 100 $0.8533
  • 250 $0.7142
$0.7142 / $1.0400 Buy Now
DISTI # SP000395166
EBV Elektronik Trans MOSFET N-CH 80V 80A 3-Pin TO-263 T/R (Alt: SP000395166) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 19 Weeks, 0 Days EBV - 26000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 21000
  • 1,000 $0.9629
  • 21,000 $0.8910
$0.8910 / $0.9629 Buy Now

Part Details for IPB054N08N3GATMA1

IPB054N08N3GATMA1 CAD Models

IPB054N08N3GATMA1 Part Data Attributes

IPB054N08N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB054N08N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0054 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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