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Part Details for IPB048N15N5LFATMA1 by Infineon Technologies AG
Overview of IPB048N15N5LFATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for IPB048N15N5LFATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93AC7100
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Newark | Mosfet, N-Ch, 150V, 120A, 150Deg C, 313W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.1V Rohs Compliant: Yes |Infineon IPB048N15N5LFATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 900 |
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$7.1100 / $10.7700 | Buy Now |
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DISTI #
IPB048N15N5LFATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 120A D2PAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1389 In Stock |
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$5.3954 / $9.5100 | Buy Now |
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DISTI #
IPB048N15N5LFATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB048N15N5LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$6.1334 | Buy Now |
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DISTI #
726-IPB048N15N5LF
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 319 |
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$5.3900 / $9.5100 | Buy Now |
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Future Electronics | OptiMOSTM 5 Linear FET, 150 V Id - Continuous Drain Current 120 A RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 7000Reel |
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$3.6200 | Buy Now |
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Future Electronics | OptiMOSTM 5 Linear FET, 150 V Id - Continuous Drain Current 120 A RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 26 Weeks Container: Reel | 2000Reel |
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$3.6200 | Buy Now |
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DISTI #
79001670
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Verical | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2351 | Americas - 8000 |
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$6.3708 | Buy Now |
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DISTI #
69264764
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Verical | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R Min Qty: 3 Package Multiple: 1 Date Code: 2315 | Americas - 1006 |
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$7.1375 / $11.2125 | Buy Now |
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DISTI #
34765590
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Verical | Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 | Americas - 1000 |
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$4.1442 | Buy Now |
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Ameya Holding Limited | Min Qty: 1000 | 926 |
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$6.7962 / $7.1346 | Buy Now |
Part Details for IPB048N15N5LFATMA1
IPB048N15N5LFATMA1 CAD Models
IPB048N15N5LFATMA1 Part Data Attributes
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IPB048N15N5LFATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB048N15N5LFATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 313 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB048N15N5LFATMA1
This table gives cross-reference parts and alternative options found for IPB048N15N5LFATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB048N15N5LFATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP051N15N5 | Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | IPB048N15N5LFATMA1 vs IPP051N15N5 |
| NTBGS6D5N15MC | Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Channel, D2PAK7, 800-REEL | onsemi | IPB048N15N5LFATMA1 vs NTBGS6D5N15MC |
| IPI051N15N5 | Power Field-Effect Transistor, 120A I(D), 150V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3 | Infineon Technologies AG | IPB048N15N5LFATMA1 vs IPI051N15N5 |