Part Details for IPB039N04LGATMA1 by Infineon Technologies AG
Overview of IPB039N04LGATMA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB039N04LGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000391495
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EBV Elektronik | N-KANAL POWER MOS (Alt: SP000391495) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Part Details for IPB039N04LGATMA1
IPB039N04LGATMA1 CAD Models
IPB039N04LGATMA1 Part Data Attributes
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IPB039N04LGATMA1
Infineon Technologies AG
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Datasheet
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IPB039N04LGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB039N04LGATMA1
This table gives cross-reference parts and alternative options found for IPB039N04LGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB039N04LGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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NP80N04PDG-E1B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | IPB039N04LGATMA1 vs NP80N04PDG-E1B-AY |
IPD90N04S405ATMA1 | Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPB039N04LGATMA1 vs IPD90N04S405ATMA1 |
NP80N04NLG-S18-AY | Power MOSFETs for Automotive, MP-25SK, /Tube | Renesas Electronics Corporation | IPB039N04LGATMA1 vs NP80N04NLG-S18-AY |
NP80N04MLG-S18-AY | Power MOSFETs for Automotive, MP-25K, /Tube | Renesas Electronics Corporation | IPB039N04LGATMA1 vs NP80N04MLG-S18-AY |
IPB80N04S3-H4 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB039N04LGATMA1 vs IPB80N04S3-H4 |
NP80N04PUG-E1B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | IPB039N04LGATMA1 vs NP80N04PUG-E1B-AY |
IPB80N04S3H4ATMA1 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB039N04LGATMA1 vs IPB80N04S3H4ATMA1 |
NP80N04PUG-E2B-AY | Power MOSFETs for Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | IPB039N04LGATMA1 vs NP80N04PUG-E2B-AY |
IPD90N04S4-05 | Power Field-Effect Transistor, 86A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB039N04LGATMA1 vs IPD90N04S4-05 |
IPB039N04LG | Power Field-Effect Transistor, 80A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB039N04LGATMA1 vs IPB039N04LG |