Part Details for IPB029N06N3GE8187ATMA1 by Infineon Technologies AG
Overview of IPB029N06N3GE8187ATMA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB029N06N3GE8187ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB029N06N3GE8187ATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$1.0941 / $2.5200 | Buy Now |
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Future Electronics | OptiMOS 3 RoHS: Non Compliant pbFree: Yes Min Qty: 42000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$1.1200 / $1.1600 | Buy Now |
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Future Electronics | OptiMOS 3 RoHS: Non Compliant pbFree: Yes Min Qty: 42000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 0Reel |
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$1.1200 / $1.1600 | Buy Now |
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Rochester Electronics | XPB029N06 - Trench 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | 83 |
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$1.0500 / $1.2300 | Buy Now |
Part Details for IPB029N06N3GE8187ATMA1
IPB029N06N3GE8187ATMA1 CAD Models
IPB029N06N3GE8187ATMA1 Part Data Attributes
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IPB029N06N3GE8187ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPB029N06N3GE8187ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 235 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB029N06N3GE8187ATMA1
This table gives cross-reference parts and alternative options found for IPB029N06N3GE8187ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB029N06N3GE8187ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPI120N06S403AKSA2 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB029N06N3GE8187ATMA1 vs IPI120N06S403AKSA2 |
| IPP120N06S403AKSA2 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB029N06N3GE8187ATMA1 vs IPP120N06S403AKSA2 |
| IPB029N06N3GATMA1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB029N06N3GE8187ATMA1 vs IPB029N06N3GATMA1 |
| IPP120N06S403AKSA1 | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPB029N06N3GE8187ATMA1 vs IPP120N06S403AKSA1 |